onsemi MOSFET Transistor NDS335N

Small Signal Field-Effect Transistor, 1.7A, 20V, N-Channel MOSFET

MOSFET N-Ch LL FET Enhancement Mode Product overview: NDS335N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS335N can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 1.7A SUPERSOT3

MOSFET N-CH 20V 1.7A SUPERSOT3

N-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102509-NDS335N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 240pF @ 10V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient