onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N NDS335N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102509-NDS335N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 240pF @ 10V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102509-NDS335N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 240pF @ 10V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N - 102509-NDS335N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N
102509-NDS335N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N 102509-NDS335N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102509-NDS335N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 240pF @ 10V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102509-NDS335N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 240pF @ 10V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - NDS335N - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 1.7A, 20V, N-Channel MOSFET

Small Signal Field-Effect Transistor, 1.7A, 20V, N-Channel MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - NDS335NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS335NTR-ND
Single FETs, MOSFETs NDS335NTR-ND
N-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-NDS335N
MOSFET Transistor 278-NDS335N
MOSFET N-Ch LL FET Enhancement Mode Product overview: NDS335N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS335N can be used for catalog matching and distributor lookup.

MOSFET N-Ch LL FET Enhancement Mode Product overview: NDS335N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS335N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS335N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS335N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS335N
MOSFET N-CH 20V 1.7A SUPERSOT3

MOSFET N-CH 20V 1.7A SUPERSOT3

Supplier's Site
Single FETs, MOSFETs - NDS335N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDS335N
Single FETs, MOSFETs NDS335N
MOSFET N-CH 20V 1.7A SUPERSOT3

MOSFET N-CH 20V 1.7A SUPERSOT3

Supplier's Site Datasheet
Single FETs, MOSFETs - NDS335N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDS335N
Single FETs, MOSFETs NDS335N
MOSFET N-CH 20V 1.7A SUPERSOT3

MOSFET N-CH 20V 1.7A SUPERSOT3

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 102509-NDS335N NDS335N NDS335NTR-ND 278-NDS335N NDS335N NDS335N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts
PD 500 milliwatts 500 milliwatts 500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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