Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102509-NDS335N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 240pF @ 10V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 20V 1.7A SUPERSOT3
MOSFET N-CH 20V 1.7A SUPERSOT3
Small Signal Field-Effect Transistor, 1.7A, 20V, N-Channel MOSFET
MOSFET N-CH 20V 1.7A SUPERSOT3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | RF Transistors |
| Product Number | 102509-NDS335N | NDS335NTR-ND | NDS335N | NDS335N | NDS335N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS335N | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 500 milliwatts | 500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
