Dual PNP BJT Transistor, 50V, -100mA, SOT-363-6 Product overview: MUN5113DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, -100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, -100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5113DW1T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 024598-MUN5113DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Pre-Biased Bipolar Transistor (BJT)
TRANS PREBIAS 2PNP 50V SOT-363
TRANS PREBIAS 2PNP 50V SOT-363
TRANS 2PNP PREBIAS 0.25W SOT363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
TRANS 2PNP PREBIAS 0.25W SOT363
BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, Dual PNP, 50 V, 250 mW, 100 mA, 80 RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-363 - More Details
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 293-MUN5113DW1T1G | 024598-MUN5113DW1T1G | 488-MUN5113DW1T1GTR-ND | MUN5113DW1T1G | MUN5113DW1T1G | MUN5113DW1T1G | 88H4924 | 90W4730 | 598-MUN5113DW1T1G |
| Product Name | Dual 50V -100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5113DW1T1G | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 47K/47Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi | Bipolar (Bjt) Single Transistor, Dual Pnp, 50 V, 250 Mw, 100 Ma, 80 Rohs Compliant Onsemi | BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-363 - More Details | |
| Polarity | PNP | PNP; 2 PNP - Pre-Biased (Dual) | PNP | 2 PNP - Pre-Biased (Dual); PNP | PNP | PNP | PNP; PNP | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||
| PD | 250 milliwatts | ||||||||
| TJ | -55 C (-67 F) |