onsemi Bipolar Transistor Arrays, Pre-Biased MUN5213DW1T3G

TRANS PREBIAS 2NPN 50V SOT-363

TRANS PREBIAS 2NPN 50V SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL Product overview: MUN5213DW1T3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5213DW1T3G can be used for catalog matching and distributor lookup.

Dual NPN Bipolar Digital Transistor (BRT)

Manufacturer: onsemi
Win Source Part Number: 1324230-MUN5213DW1T3G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: ONSONSMUN5213DW1T3G,2156-MUN5213DW1T3G-OS
Base Product Number: MUN5213
RoHS Status: ROHS3 Compliant