onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased MUN5213DW1T3G

Description
Dual NPN Bipolar Digital Transistor (BRT)
Request a Quote Datasheet
Description
Dual NPN Bipolar Digital Transistor (BRT)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MUN5213DW1T3G - Rochester Electronics
Newburyport, MA, United States
Dual NPN Bipolar Digital Transistor (BRT)

Dual NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1324230-MUN5213DW1T3G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1324230-MUN5213DW1T3G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1324230-MUN5213DW1T3G
Manufacturer: onsemi Win Source Part Number: 1324230-MUN5213DW1T3 G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 NPN - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-88/SC70-6/SOT-363 Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 76 MSL Level: 1 (Unlimited) Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: ONSONSMUN5213DW1T3G, 2156-MUN5213DW1T3G-O S Base Product Number: MUN5213 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1324230-MUN5213DW1T3G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: ONSONSMUN5213DW1T3G,2156-MUN5213DW1T3G-OS
Base Product Number: MUN5213
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
Dual Bipolar Transistor
293-MUN5213DW1T3G
Dual Bipolar Transistor 293-MUN5213DW1T3G
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL Product overview: MUN5213DW1T3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5213DW1T3G can be used for catalog matching and distributor lookup.

Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL Product overview: MUN5213DW1T3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5213DW1T3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-MUN5213DW1T3GDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-MUN5213DW1T3GDKR-ND
Bipolar Transistor Arrays, Pre-Biased 488-MUN5213DW1T3GDKR-ND
TRANS PREBIAS 2NPN 50V SOT-363

TRANS PREBIAS 2NPN 50V SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-MUN5213DW1T3GCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-MUN5213DW1T3GCT-ND
Bipolar Transistor Arrays, Pre-Biased 488-MUN5213DW1T3GCT-ND
TRANS PREBIAS 2NPN 50V SOT-363

TRANS PREBIAS 2NPN 50V SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 488-MUN5213DW1T3GTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
488-MUN5213DW1T3GTR-ND
Bipolar Transistor Arrays, Pre-Biased 488-MUN5213DW1T3GTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN5213DW1T3G
Bipolar Transistors - Pre-Biased MUN5213DW1T3G
Bipolar Transistors - Pre-Biased SS SC88 BR XSTR XSTR NPN 50V

Bipolar Transistors - Pre-Biased SS SC88 BR XSTR XSTR NPN 50V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5213DW1T3G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5213DW1T3G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5213DW1T3G
TRANS PREBIAS 2NPN 50V SC88

TRANS PREBIAS 2NPN 50V SC88

Supplier's Site
Dual Npn Bipolar Digital Transistor (Brt) / Reel Onsemi - 63R4236 - Newark, An Avnet Company
Chicago, IL, United States
Dual Npn Bipolar Digital Transistor (Brt) / Reel Onsemi
63R4236
Dual Npn Bipolar Digital Transistor (Brt) / Reel Onsemi 63R4236
Dual NPN Bipolar Digital Transistor (BRT) / REEL

Dual NPN Bipolar Digital Transistor (BRT) / REEL

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MUN5213DW1T3G 1324230-MUN5213DW1T3G 293-MUN5213DW1T3G 488-MUN5213DW1T3GDKR-ND MUN5213DW1T3G MUN5213DW1T3G 63R4236
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Dual Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Dual Npn Bipolar Digital Transistor (Brt) / Reel Onsemi
Polarity NPN NPN NPN NPN NPN
Package Type SC-88/SC70-6/SOT-363 6 LEAD SOT3; 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 80 dB
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