onsemi Single, Pre-Biased Bipolar Transistors MUN2213T1G

Description
TRANS PREBIAS NPN 50V 100MA SC59
Request a Quote Datasheet
Description
TRANS PREBIAS NPN 50V 100MA SC59
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - MUN2213T1G - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
MUN2213T1G
Single, Pre-Biased Bipolar Transistors MUN2213T1G
TRANS PREBIAS NPN 50V 100MA SC59

TRANS PREBIAS NPN 50V 100MA SC59

Supplier's Site Datasheet
 - MUN2213T1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2213T1G - 024593-MUN2213T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2213T1G
024593-MUN2213T1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2213T1G 024593-MUN2213T1G
Manufacturer: ON Semiconductor Win Source Part Number: 024593-MUN2213T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 338mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 024593-MUN2213T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 338mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2213T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2213T1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MUN2213T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2213T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2213T1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MUN2213T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2213T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2213T1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MUN2213T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Singapore
50V 100mA Bipolar Transistor
292-MUN2213T1G
50V 100mA Bipolar Transistor 292-MUN2213T1G
NPN Digital BJT Transistor 50V 100mA SC-59 Tape & Reel Product overview: MUN2213T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2213T1G can be used for catalog matching and distributor lookup.

NPN Digital BJT Transistor 50V 100mA SC-59 Tape & Reel Product overview: MUN2213T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2213T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2213T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2213T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2213T1G
TRANS PREBIAS NPN 50V 0.1A SC59

TRANS PREBIAS NPN 50V 0.1A SC59

Supplier's Site
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi - 67H6954 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi
67H6954
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi 67H6954
BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

Supplier's Site
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi - 10N9539 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi
10N9539
Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi 10N9539
BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

Supplier's Site
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO - 598-MUN2213T1G - Utmel Electronic Limited
Hong Kong, China
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO
598-MUN2213T1G
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO 598-MUN2213T1G
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO

Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN2213T1G
Bipolar Transistors - Pre-Biased MUN2213T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Digital Transistors
MUN2213T1G
Triode/MOS Tube/Transistor >> Digital Transistors MUN2213T1G
80@5mA,10V 1 NPN - Pre Biased 338mW 100mA 50V 500nA SC-59 Digital Transistors ROHS

80@5mA,10V 1 NPN - Pre Biased 338mW 100mA 50V 500nA SC-59 Digital Transistors ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number MUN2213T1G MUN2213T1G 024593-MUN2213T1G MUN2213T1GOSCT-ND 292-MUN2213T1G MUN2213T1G 67H6954 598-MUN2213T1G MUN2213T1G MUN2213T1G
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2213T1G Single, Pre-Biased Bipolar Transistors 50V 100mA Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO Bipolar Transistors - Pre-Biased Triode/MOS Tube/Transistor >> Digital Transistors
Polarity NPN - Pre-Biased; NPN NPN NPN; NPN - Pre-Biased NPN NPN NPN; NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SC-59 3 LEAD SOT3; SC-59 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
Output Power 0.3380 watts
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