Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP1N60E MTP1N60E

The MTP1N60E is a 600 V, 1 A N-channel power MOSFET in a TO-220AB package, designed for high-voltage switching applications such as power supplies and PWM motor controls. It features a drain-source on-resistance of up to 8.0 Ω at 25°C, a junction-to-case thermal resistance of 2.50 °C/W, and a single-pulse avalanche energy rating of 45 mJ. The device includes a fast-recovery source-to-drain diode with a reverse recovery time of 464 ns. Maximum continuous drain current is 1.0 A at 25°C, derating to 0.8 A at 100°C. Operating and storage junction temperatures range from -55°C to 150°C. The package is a three-lead TO-220AB, with dimensions specified as 15.75 mm max length, 10.28 mm max width, and 6.47 mm max height. The part is rated for 260°C lead temperature for soldering.