Rochester Electronics IGBTs - Single - NGTB15N135IHRWG NGTB15N135IHRWG

The NGTB15N135IHRWG is an insulated gate bipolar transistor (IGBT) with a monolithic free-wheeling diode, designed for high-efficiency switching applications such as inductive heating and consumer appliances. It is packaged in a TO-247-3 case with dimensions of 20.30 to 21.40 mm in length and 15.50 to 16.25 mm in width. The device has a 1350 V collector-emitter breakdown voltage, a continuous collector current rating of 15 A at 100°C, and a pulsed current capability of 60 A. It features a low on-state voltage of 2.15 V at 15 A and 25°C, and a total gate charge of 156 nC. The thermal resistance from junction to case is 0.42 °C/W, and the operating junction temperature range is -40°C to +175°C. The device is Pb-free and meets RoHS requirements.