Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. This device is suitable for use in pulse applications, including Mode S ELM.
RF MOSFET LDMOS 50V NI780
| Rochester Electronics | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | RF Transistors |
| Product Number | MRF6V12500GSR5 | MRF6V12500GSR5 | MRF6V12500GSR5 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | ||
| Package Type | CFM2 | Ceramic Gull Wing | NI-780GS-2L |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) |
