This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. This device is suitable for use in pulse applications, including Mode S ELM.
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
RF MOSFET LDMOS 50V NI780
| Richardson RFPD | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Power MOSFET | RF Transistors |
| Product Number | MRF6V12500GSR5 | MRF6V12500GSR5 | MRF6V12500GSR5 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Ceramic Gull Wing | CFM2 | NI-780GS-2L |
| Power Gain | 19.7 dB | ||
| Output Power | 500 watts |
