Rochester Electronics IGBTs - Single - NGTB40N65IHRTG NGTB40N65IHRTG

The NGTB40N65IHRTG is a 650 V, 40 A insulated gate bipolar transistor with a monolithic reverse conducting diode, designed for low conduction loss applications such as inductive heating and air conditioning PFC. It is packaged in a TO-3P case (CASE 340AB) with dimensions of 19.70 to 20.10 mm in length, 15.40 to 15.80 mm in width, and 4.60 to 5.00 mm in thickness. The device has a collector-emitter saturation voltage of 1.55 V at 40 A and 25°C, a total gate charge of 190 nC, and a turn-off switching loss of 0.42 mJ under standard conditions. Thermal resistance from junction to case is 0.37 °C/W. It operates with a junction temperature range of -40°C to +175°C and is Pb-free.