Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - N0300N-T1B-AT N0300N-T1B-AT

Manufacturer: Renesas Electronics America
Win Source Part Number: 1081488-N0300N-T1B-AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C
Case / Package: SC-96-3, Thin Mini Mold
Dimension: SC-96
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Ta)
Max Gate Charge: 7.4nC @ 10V (Typ)
Max Input Capacitance: 350pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-CH 30V 4.5A SC96-3 Product overview: N0300N-T1B-AT from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-N0300N-T1B-AT can be used for catalog matching and distributor lookup.