onsemi Single, Pre-Biased Bipolar Transistors MUN2132T1

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - MUN2132T1-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2132T1-ND
Single, Pre-Biased Bipolar Transistors MUN2132T1-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2132T1 - 059659-MUN2132T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2132T1
059659-MUN2132T1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2132T1 059659-MUN2132T1
Manufacturer: ON Semiconductor Win Source Part Number: 059659-MUN2132T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 15 @ 5mA, 10V Maximum Power Dissipation: 230mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 059659-MUN2132T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 15 @ 5mA, 10V
Maximum Power Dissipation: 230mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - MUN2132T1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Singapore, Singapore
100mA 50V Bipolar Transistor
292-MUN2132T1
100mA 50V Bipolar Transistor 292-MUN2132T1
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2132T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2132T1 can be used for catalog matching and distributor lookup.

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2132T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2132T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2132T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2132T1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2132T1
TRANS PREBIAS PNP 50V 0.1A SC59

TRANS PREBIAS PNP 50V 0.1A SC59

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MUN2132T1-ND 059659-MUN2132T1 MUN2132T1 292-MUN2132T1 MUN2132T1
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2132T1 100mA 50V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased PNP PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SC-59 CPH3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
IC(max) 100 milliamps 100 milliamps
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