onsemi Single Bipolar Transistors MPSW01G

Description
NPN Bipolar Transistor
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Description
NPN Bipolar Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MPSW01G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - MPSW01GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSW01GOS-ND
Single Bipolar Transistors MPSW01GOS-ND
Bipolar (BJT) Transistor NPN 30V 1A 50MHz 1W Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 30V 1A 50MHz 1W Through Hole TO-92 (TO-226)

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 963856-MPSW01G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
963856-MPSW01G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 963856-MPSW01G
Win Source Part Number: 963856-MPSW01G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Box Standard Package: 5,000 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Frequency - Transition: 50MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92 (TO-226) Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): KSD471ACYTA; KSD471AGTA; KSD471AYTA; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. HTSUS: 8541.29.0075 Mfr: Sanyo Other Names: ONSSNYMPSW01G,2156-M PSW01G-SA Product Status: Obsolete

Win Source Part Number: 963856-MPSW01G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Box
Standard Package: 5,000
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): KSD471ACYTA; KSD471AGTA; KSD471AYTA;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
HTSUS: 8541.29.0075
Mfr: Sanyo
Other Names: ONSSNYMPSW01G,2156-MPSW01G-SA
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSW01G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSW01G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSW01G
TRANS NPN 30V 1A TO92

TRANS NPN 30V 1A TO92

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MPSW01G MPSW01GOS-ND 963856-MPSW01G MPSW01G
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-92; TO-92 (TO-226) 1 WATT TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3
Packing Method Bulk; Bulk Box
IC(max) 1000 milliamps 1000 milliamps
Power Gain 60 dB
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