Rochester Electronics Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 12V, 3A, PNP Power MOSFET | |
| 16V, N-Channel MOSFET | |
| 30V, 60A, N-Channel Power MOSFET | |
| A2T18H450 - Airfast RF Power LDMOS Transistor 1805-1880 MHz, 89 W Avg., 30 V | |
| AC Input-Transistor Output Optocoupler, 1-Element, 5000V Isolation | |
| BCP56 - NPN Bipolar Transistor | |
| Bias resistor built-in transistor (BRT), 2-in-1 | |
| Disctrete / Power Transistor | |
| High Speed IGBT, 270V, 50A | |
| High Speed IGBT, 300V, 30A | |
| High Speed IGBT, 300V, 40A | |
| High Speed IGBT | |
| IC VOLT REG Transistor Driver Step-Down Buck 1OUT 4.5V - 28V 12-SON | |
| IC VOLT REG Transistor Driver Step-Down Buck 1OUT 4.5V - 46V 20-QFN T/R | |
| IC VOLT REG Transistor Driver Step-Up/Step-Down Full-Bridge, Half-Bridge, Push-Pull 2OUT 4.26V - 16V 10-SOP T/R | |
| IGBT 1200V 70A | |
| IGBT 430V, 200A | |
| IGBT 430V, 40A for Plasma TV | |
| IGBT 600V 25A | |
| IGBT 630V, 40A for Plasma TV | |
| IGBTs for Strobe, 400V, 120A, N-Channel | |
| IGBTs for Strobe, 400V, 150A, N-Channel | |
| IGBTs for Strobe, 430V, 200A, N-Channel | |
| Insulated Gate Bipolar Transistor, 30A, 1200V, N-Channel, TO-247 | |
| Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247 | |
| Insulated Gate Bipolar Transistor, 90A, 600V, N-Channel | |
| Insulated Gate Bipolar Transistor | |
| MOSFET P-CH 30V 2A SOT563 | |
| N Channel IGBT High Speed Power Switching | |
| N Channel MOSFET | |
| N Channel Power MOSFET | |
| N-Channel 30V, 30A, Power Switching MOSFET | |
| N-Channel 30V, 40A, Power Switching MOSFET | |
| N-Channel 30V, 50A, Power Switching MOSFET | |
| N-Channel 30V, 50A,Power MOSFET for High Speed Switching | |
| N-Channel 30V, 65A, Power MOSFET | |
| N-Channel Power MOSFET Power Switching | |
| N-Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching | |
| N-Channel Power MOSFET with Schottky Barrier Diode Power Switching | |
| N-Channel Power MOSFET with Schottky Barrier Diode | |
| N-Channel Power MOSFET | |
| N-Channel Power Switching MOSFET | |
| N-Channel Silicon MOSFET For General-Purpose Switching Device Application | |
| N-Channel Silicon MOSFET For General-Purpose Switching Device Applications | |
| N-Channel Silicon MOSFET For Ultrahigh-Speed Switching Application | |
| N-Channel, 25A, 25V, Switching Power MOSFET | |
| Nch IGBT for Strobe Flash | |
| Nch Single Power Mosfet 600V 6A | |
| NPN Bipolar Digital Transistor (BRT) | |
| NPN Bipolar Transistor | |
| NPN microwave power transistor | |
| P Channel Power MOSFET | |
| P-Channel Power MOSFET High Speed Switching | |
| P-Channel Silicon MOSFET For General-Purpose Switching Device Application | |
| Phototransistor Top View Radial | |
| PNP 80 V Bipolar Transistor | |
| PNP Bipolar Digital Transistor (BRT) | |
| PNP Bipolar Transistor | |
| Power Field-Effect P-Channel MOSFET | |
| Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, MOSFET | |
| Power Field-Effect Transistor, N-Channel MOSFET | |
| Power Field-Effect Transistor | |
| Power MOSFET | |
| Radial T1 3/4 Silicon NPN Phototransistor | |
| RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET | |
| RJH60 - IGBT Trench 600 V 35 A 40 W Through Hole | |
| RJH60F4DPQ-A0 - Insulated Gate Bipolar Transistor | |
| RJK0603DPN-A0 - N-Channel MOSFET 60 V, 80 A | |
| RJK0703DPN-A0 - N-Channel MOSFET 75 V, 70 A | |
| RJK1002DPN-A0 - N-Channel MOSFET 100V, 70A | |
| RJK1003DPN-A0 - N-Channel MOSFET 100V, 50A | |
| RN1106ACT - TRANSISTOR (SILICON) | |
| RN1107ACT - TRANSISTOR (SILICON) | |
| RN1108ACT - TRANSISTOR (SILICON) | |
| RN1316 - Bias resistor built-in transistor (BRT) | |
| RN1317 - Bias resistor built-in transistor (BRT) | |
| RN1401 - Bias resistor built-in transistor (BRT) | |
| RN1406 - Bias resistor built-in transistor (BRT) | |
| RN1511 - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN1608 - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN1609 - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN1610 - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN1908FE - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN1909 - Bias resistor built-in transistor (BRT), 2-in-1 | |
| RN2101ACT - TRANSISTOR (SILICON) | |
| RN2114MFV - Bias resistor built-in transistor (BRT) | |
| RN2307 - Bias resistor built-in transistor (BRT) | |
| RX1214B280YH - Microwave Power Transistor (Cus Special) | |
| RX1214B300Y - Microwave Power Transistor | |
| RX1214B300YI - BiPolar microwave power transistor, SOT439A | |
| S1BC846BPDW1T1G - Complementary BJT | |
| SB29003 - High Voltage Transistor | |
| SBC817-25L - General Purpose Transistors NPN Silicon | |
| SBC847BW - Small Signal Bipolar Transistor, 0.1A, 45V, NPN | |
| SBVS138LT1G - MOSFET N-CH 50V 0.2A SOT-23 | |
| SCH1433 - MOSFET N-CH 20V 3.5A SCH6 | |
| SFH 309 - Phototransistor Top View Radial | |
| Silicon N Channel MOS FET TransistorHigh Speed Power Switching | |
| SILICON N-Channel Power MOSFET Power Switching | |
| SILICON N-Channel Power Switching MOSFET | |
| Silicon Nch Single Power Mosfet 600V 0.1A 52000Mohm Sot-223A | |
| Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | |
| Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A, 30V, NPN, TO-236AB | |
| Small Signal Bipolar Transistor, 0.1A, 45V, NPN, TO-236AB | |
| Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-236AB | |
| Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | |
| Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | |
| Small Signal Bipolar Transistor, 0.5A, 45V, NPN, TO-236AB | |
| Small Signal Bipolar Transistor | |
| Small Signal Field-Effect Transistor, N-Channel, MOSFET | |
| Small Signal Field-Effect Transistor, P-Channel, MOSFET | |
| Small Signal Field-Effect Transistor | |
| TRANSISTOR (SILICON) | |
| Transistor Output Optocoupler, 1-Element, 5000V Isolation | |
| Transistor |
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