Panasonic MPSW01G

Description
NPN Bipolar Transistor
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Description
NPN Bipolar Transistor
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Datasheet
Datasheet Summary
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The MPSW01G is an NPN silicon transistor in a TO-92 package, rated for a continuous collector current of 1000 mA and a total device dissipation of 1.0 W at 25°C. It has a collector-emitter voltage rating of 30 V and a collector-base voltage rating of 40 V. The device exhibits a minimum DC current gain of 50 at 1000 mA collector current and a collector-emitter saturation voltage of up to 0.5 V under the same conditions. Thermal resistance from junction-to-ambient is 125 °C/W, with an operating and storage junction temperature range of -55°C to +150°C. The part is Pb-free and available in bulk packaging.

Datasheet Summary
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The MPSW01G is an NPN silicon transistor in a TO-92 package, rated for a continuous collector current of 1000 mA and a total device dissipation of 1.0 W at 25°C. It has a collector-emitter voltage rating of 30 V and a collector-base voltage rating of 40 V. The device exhibits a minimum DC current gain of 50 at 1000 mA collector current and a collector-emitter saturation voltage of up to 0.5 V under the same conditions. Thermal resistance from junction-to-ambient is 125 °C/W, with an operating and storage junction temperature range of -55°C to +150°C. The part is Pb-free and available in bulk packaging.

Suppliers

Company
Product
Description
Supplier Links
 - MPSW01G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number MPSW01G
Polarity NPN
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