NPN Digital BJT Transistor 50V 100mA SC-70 Tape & Reel Product overview: MUN5214T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN5214T1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
Manufacturer: ON Semiconductor
Win Source Part Number: 024607-MUN5214T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-70-3 (SOT323)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 202mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TRANS PREBIAS NPN 50V SC70-3
BRT TRANSISTOR, 50V, 47K/10KOHM, SOT-323, FULL REEL; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; RF Transistor Case:SOT-323 RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 10K/47KOHM, SC-70-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
TRANS PREBIAS NPN 50V SC70-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 292-MUN5214T1G | MUN5214T1GOSDKR-ND | 024607-MUN5214T1G | MUN5214T1G | MUN5214T1G | 88H4935 | 49X8892 | MUN5214T1G |
| Product Name | 50V 100mA Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN5214T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 47K/10Kohm, Sot-323, Full Reel; Digital Transistor Polarity Onsemi | Brt Transistor, 50V, 10K/47Kohm, Sc-70-3; Digital Transistor Polarity Onsemi | Single, Pre-Biased Bipolar Transistors | |
| Polarity | NPN | NPN | NPN; NPN - Pre-Biased | NPN | NPN - Pre-Biased; NPN | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||
| PD | 202 milliwatts | |||||||
| TJ | -55 C (-67 F) |
