Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD4N20E1 MTD4N20E1

The MTD4N20E is a 200 V, 4 A N-channel power MOSFET in a DPAK package designed for high-voltage, high-speed switching applications such as power supplies, converters, and PWM motor controls. It features avalanche energy rating of 80 mJ and a source-to-drain diode with reverse recovery time of 123 ns. The device has a maximum continuous drain current of 4.0 A at 25°C, a drain-source on-resistance of 0.98 Ω at 10 V gate voltage, and is qualified to AEC-Q200. The DPAK package measures 6.22 mm maximum length, 6.73 mm maximum width, and 2.89 mm maximum height, with mounting dimensions specified for surface mount assembly. It is rated for operation from -55°C to 150°C junction temperature.