onsemi 50V 100mA Bipolar Transistor MUN5311DW1T1G

Description
Digital Transistor NPN/PNP 50V 100mA 6-Pin SC-88 Product overview: MUN5311DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5311DW1T1G can be used for catalog matching and distributor lookup.
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Description
Digital Transistor NPN/PNP 50V 100mA 6-Pin SC-88 Product overview: MUN5311DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5311DW1T1G can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The MUN5311DW1 is a digital transistor featuring both NPN and PNP configurations, designed to simplify circuit design by integrating a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes a base input resistor of 10kOc and a base-emitter resistor of 10kOc, which helps reduce component count and board space. It is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards. The transistor is available in a SOT-363 package, with options for tape and reel packaging for efficient handling. The thermal characteristics indicate a maximum total device dissipation of 187mW at 25¬8C, with a junction temperature range of -55¬8C to +150¬8C.

Datasheet Summary
Powered by GS/AI

The MUN5311DW1 is a digital transistor featuring both NPN and PNP configurations, designed to simplify circuit design by integrating a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes a base input resistor of 10kOc and a base-emitter resistor of 10kOc, which helps reduce component count and board space. It is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards. The transistor is available in a SOT-363 package, with options for tape and reel packaging for efficient handling. The thermal characteristics indicate a maximum total device dissipation of 187mW at 25¬8C, with a junction temperature range of -55¬8C to +150¬8C.

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Product
Description
Supplier Links
Singapore
50V 100mA Bipolar Transistor
293-MUN5311DW1T1G
50V 100mA Bipolar Transistor 293-MUN5311DW1T1G
Digital Transistor NPN/PNP 50V 100mA 6-Pin SC-88 Product overview: MUN5311DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5311DW1T1G can be used for catalog matching and distributor lookup.

Digital Transistor NPN/PNP 50V 100mA 6-Pin SC-88 Product overview: MUN5311DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5311DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5311DW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5311DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5311DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5311DW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5311DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5311DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5311DW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5311DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5311DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
 - MUN5311DW1T1G - Rochester Electronics
Newburyport, MA, United States
Complementary Bipolar Digital Transistor (BRT)

Complementary Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5311DW1T1G - 024615-MUN5311DW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5311DW1T1G
024615-MUN5311DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5311DW1T1G 024615-MUN5311DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 024615-MUN5311DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 024615-MUN5311DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistors - 6900195 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
6900195
Bipolar Transistors 6900195
Trans. Digital NPN/PNP 50V 100mA SC-88

Trans. Digital NPN/PNP 50V 100mA SC-88

Supplier's Site
Bipolar Transistors - 6900195P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
6900195P
Bipolar Transistors 6900195P
Trans. Digital NPN/PNP 50V 100mA SC-88

Trans. Digital NPN/PNP 50V 100mA SC-88

Supplier's Site
Bipolar Transistors - 1632545 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1632545
Bipolar Transistors 1632545
Trans. Digital NPN/PNP 50V 100mA SC-88

Trans. Digital NPN/PNP 50V 100mA SC-88

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5311DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5311DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5311DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88

TRANS PREBIAS 1NPN 1PNP 50V SC88

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN5311DW1T1G
Bipolar Transistors - Pre-Biased MUN5311DW1T1G
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Buy Now Datasheet
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Digital Transistor Polarity Onsemi - 88H4940 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Digital Transistor Polarity Onsemi
88H4940
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Digital Transistor Polarity Onsemi 88H4940
BRT TRANSISTOR, 50V, 10K/10KOHM, SC88, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; No. of Pins:6 Pin RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 10K/10KOHM, SC88, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; No. of Pins:6 Pin RoHS Compliant: Yes

Supplier's Site
Trans, 50V, 10/10Kohm, Sot-363; Digital Transistor Polarity Onsemi - 80Y9478 - Newark, An Avnet Company
Chicago, IL, United States
Trans, 50V, 10/10Kohm, Sot-363; Digital Transistor Polarity Onsemi
80Y9478
Trans, 50V, 10/10Kohm, Sot-363; Digital Transistor Polarity Onsemi 80Y9478
TRANS, 50V, 10/10KOHM, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; RoHS Compliant: Yes

TRANS, 50V, 10/10KOHM, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 10 Kohm, 1, Sot-363 Rohs Compliant Onsemi - 94W9076 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 10 Kohm, 1, Sot-363 Rohs Compliant Onsemi
94W9076
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 10 Kohm, 1, Sot-363 Rohs Compliant Onsemi 94W9076
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1, SOT-363 RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1, SOT-363 RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5311DW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
MUN5311DW1T1G
Bipolar Transistor Arrays, Pre-Biased MUN5311DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88

TRANS PREBIAS 1NPN 1PNP 50V SC88

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Win Source Electronics RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global)
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 293-MUN5311DW1T1G MUN5311DW1T1GOSCT-ND MUN5311DW1T1G 024615-MUN5311DW1T1G 6900195 6900195P MUN5311DW1T1G MUN5311DW1T1G 88H4940 80Y9478 94W9076 MUN5311DW1T1G
Product Name 50V 100mA Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5311DW1T1G Bipolar Transistors Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Digital Transistor Polarity Onsemi Trans, 50V, 10/10Kohm, Sot-363; Digital Transistor Polarity Onsemi Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 10 Kohm, 1, Sot-363 Rohs Compliant Onsemi Bipolar Transistor Arrays, Pre-Biased
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) NPN; PNP NPN; PNP 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP
Package Type 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 6 LEAD SOT3; SC-88/SC70-6/SOT-363 Sot-363 (sc-88) SOT-363 (SC-88) TO-3 TO-3; SOT3 TO-3; SOT3 6-TSSOP, SC-88, SOT-363
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Number of units in IC 2
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