Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF18085BLSR3 MRF18085BLSR3

The MRF18085BLSR3 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications in the 1930 to 1990 MHz range. It is packaged in a NI-780S case, STYLE 1, with dimensions of 34.16 mm maximum length, 9.91 mm maximum width, and 1.70 mm maximum height. The device features internal matching, integrated ESD protection, and is rated for a maximum drain-source voltage of 65 Vdc and a case operating temperature of 150°C. It achieves a typical power gain of 12.5 dB and 50% drain efficiency at 85 W CW output under 26 Vdc bias. Thermal resistance from junction to case is 0.79 °C/W. The part is RoHS compliant and available in tape and reel packaging.