Rochester Electronics Bipolar RF Transistors MX0912B251Y

Description
MX0912B251Y - NPN SILICON RF POW
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Description
MX0912B251Y - NPN SILICON RF POW
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Suppliers

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Product
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Supplier Links
Bipolar RF Transistors - MX0912B251Y - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MX0912B251Y
Bipolar RF Transistors MX0912B251Y
MX0912B251Y - NPN SILICON RF POW

MX0912B251Y - NPN SILICON RF POW

Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MX0912B251Y
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B251Y
MX0912B251Y - NPN SILICON RF POW

MX0912B251Y - NPN SILICON RF POW

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number MX0912B251Y MX0912B251Y
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
Package Type SOT-439A
IC(max) 15000 milliamps
VCEO 60 volts 60 volts
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