Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more

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Product Name	Notes
Power MOSFET Transistor -- FM400TU-3A	150V, 200A, Insulated type 6-element pack, NTC Thermistor inside
RF Power Transistor -- D2219UK	2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
RF Power Transistor -- D1028UK	300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
RF Power Transistor -- D1002UK	40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
Power IGBT Transistor -- CM2400HC-34N	4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
Power IGBT Transistor -- CM1200HC-90R	4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Power IGBT Transistor -- CM100TX-24S1	6.1 Generation 1200V NX-Series IGBT The latest NX-Series IGBTs use the 6.1 Generation CSTBTTM (Carrier Stored Trench Gate Bipolar Transistor) chip which offers significantly lower losses compared to competing chip...
GaN Power Transistor -- GS-065-030-2-L-MR	650 V E-mode GaN on Silicon bottom side cooled power transistor that offers very low junction to case thermal resistance for demanding high power applications and very high efficiency power...
GaN Power Transistor -- GS-065-011-2-L-MR GaN Power Transistor -- GS-065-011-2-L-TR	650V Enhancement Mode GaN Transistor The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN...
GaN Power Transistor -- GS-065-060-3-B-MR	650V Enhancement Mode GaN Transistor The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN...
Power IGBT Transistor -- CM75TX-24S	6th Generation IGBT 6in1 (or 6-pack) Module (NX-Series). Applications: General Purpose Drives; Photovoltaic Inverters; UPS.
Silicon Carbide MOSFETs -- EPM3-1200-0014D1-FY6	1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs Gen 3+ Features Automotive Qualified High blocking voltage with industry leading low RDS(on) over temperature stability Resistant to Latch-up High gate...
Silicon Carbide MOSFET Modules -- EAB450M12XM3	Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized , Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements...
Silicon Carbide MOSFETs -- E3M0016120K Silicon Carbide MOSFETs -- E3M0021120K	Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Silicon Carbide MOSFETs -- CPM3-1200-0013A	Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to Latch-up High Gate Resistance for Drives Benefits Higher System Efficiency...
Silicon Carbide MOSFETs -- CPM3-1200-0032A	Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses...
Silicon Carbide MOSFETs -- CPM3-1200-0075A	Features High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back...
Silicon Carbide MOSFETs -- CPM3-1200-0021A-FY6	Features High blocking voltage with low on-resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Benefits Higher System Efficiency Low...
Silicon Carbide MOSFETs -- CPM3-0650-0060A	Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and...
Silicon Carbide MOSFETs -- CPM3-0900-0010A-FY6 Silicon Carbide MOSFETs -- CPM3-0900-0065A	Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output...
Silicon Carbide MOSFETs -- CPM3-0900-0065A-FY6 Silicon Carbide MOSFETs -- CPM3-1200-0016A Silicon Carbide MOSFETs -- CPM3-1200-0016A-FY6 Silicon Carbide MOSFETs -- CPM3-1200-0016A-WJ6 Silicon Carbide MOSFETs -- CPM3-1700-R020E	Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and...
Silicon Carbide MOSFETs -- E4M0015075J2-TR Silicon Carbide MOSFETs -- E4M0025075J2-TR	Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 750V SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High blocking...
Silicon Carbide MOSFETs -- E4M0015075K1 Silicon Carbide MOSFETs -- E4M0025075K1 Silicon Carbide MOSFETs -- E4M0060075K1	Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Optimized package with separate driver source pin High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic...
Silicon Carbide MOSFETs -- E3M0900170D Silicon Carbide MOSFETs -- E3M0900170J-TR	Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low on-resistance High speed switching with low capacitances 12V...15V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate...
Silicon Carbide MOSFET Modules -- ECB2R1M12YM3 Silicon Carbide MOSFET Modules -- ECB2R8M12YM3 Silicon Carbide MOSFET Modules -- ECB4R3M12YM3	Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6...
Silicon Carbide MOSFET Modules -- ECB2R1M12YM3L Silicon Carbide MOSFET Modules -- ECB2R8M12YM3L Silicon Carbide MOSFET Modules -- ECB4R3M12YM3L	Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6 nH) High Performance Si3N4...
Silicon Carbide MOSFET Modules -- CHB011M12GM4	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters...
Silicon Carbide MOSFET Modules -- CHB011M12GM4T	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications...
RF Power Transistor -- CGHV40100P	CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40100F	CGHV40100F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180F	CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180P	CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40200PP	CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40320D-GP4	CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV50200F	CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,...
RF Power Transistor -- CGHV59070F	CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CGHV59070P	CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CGHV59350F	CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -...
RF Power Transistor -- CGHV60040D-GP4	CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV60075D5-GP4	CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV60170D-GP4	CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV96050F1	CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96050F2	CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96100F2	CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96130F	CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies.
Power IGBT Transistor -- CM400C1Y-24S	Dual (AC Switch) IGBT S-Series Module. Powerex Dual IGBT Module in a common collector AC Switch configuration. Each module consists of two IGBTs in an AC Switch configuration with each...
Power IGBT Transistor -- CM200DX-24S	Dual IGBTMOD™ NX-S Series Module 200 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with...
Power IGBT Transistor -- CM300DX-24S	Dual IGBTMOD™ NX-S Series Module 300 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with...
Power IGBT Transistor -- CM450DX-24S	Dual IGBTMOD™ NX-S Series Module 450 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with...
Silicon Carbide MOSFETs -- E3M0075120D	Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant...
Silicon Carbide MOSFETs -- E3M0032120K Silicon Carbide MOSFETs -- E3M0040120K Silicon Carbide MOSFETs -- E3M0045065K Silicon Carbide MOSFETs -- E3M0075120K	Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Silicon Carbide MOSFETs -- CPM3-0900-0065B-FE4	Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output...
Power IGBT Transistor -- FZ12NMA080SH-M269F	FlowmNPC0. Mixed voltage component topology. Neutral point clamped inverter. Reactive power capability. Low inductance layout.
RF Power Transistor -- D2216UK	Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
Power IGBT Transistor -- CM450DY-24T Power IGBT Transistor -- CM600DY-24T	High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 Application AC Motor Control, Motion/Servo...
Power IGBT Transistor -- CM450DX-24T Power IGBT Transistor -- CM450DX-34T Power IGBT Transistor -- CM600DX-24T Power IGBT Transistor -- CM600DX-34T Power IGBT Transistor -- CM800DX-24T1	High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals Application AC Motor Control, Motion/Servo Control, Power Supply, etc
RF Power Transistor -- DMD1028	New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
Power IGBT Transistor -- CM300DY-24S Power IGBT Transistor -- CM450DY-24S Power IGBT Transistor -- CM600DY-24S Power IGBT Transistor -- CM800DY-24S	Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery...
Power IGBT Transistor -- CM150EXS-24S Power IGBT Transistor -- CM200EXS-24S Power IGBT Transistor -- CM300EXS-24S	Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the...
Power IGBT Transistor -- CM100DU-24NFH Power IGBT Transistor -- CM200DU-12NFH Power IGBT Transistor -- CM300DU-12NFH Power IGBT Transistor -- CM400DU-12NFH	Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of...
Power IGBT Transistor -- CM100TX-24S	Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration with each transistor having a reverse-connected super-fast...
Power IGBT Transistor -- CM150TX-24S	Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast...
Power IGBT Transistor -- CM100DU-34KA Power IGBT Transistor -- CM100DY-24A Power IGBT Transistor -- CM150DY-12NF Power IGBT Transistor -- CM200DU-24F Power IGBT Transistor -- CM200DY-12NF Power IGBT Transistor -- CM200DY-24NF Power IGBT Transistor -- CM600DXL-24S Power IGBT Transistor -- CM600DY-24A	Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel...
Power IGBT Transistor -- CM1000DUC-34SA Power IGBT Transistor -- CM900DUC-24S	Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components...
Power MOSFET Transistor -- FM400TU-2A Power MOSFET Transistor -- FM600TU-07A Power MOSFET Transistor -- FM600TU-2A Power MOSFET Transistor -- FM600TU-3A	Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield...
RF Power Transistor -- DRF1400	RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
GaN Power Transistor -- GS-065-004-6-L-MR GaN Power Transistor -- GS-065-004-6-L-TR GaN Power Transistor -- GS-065-008-6-L-MR GaN Power Transistor -- GS-065-008-6-L-TR GaN Power Transistor -- GS-065-011-6-L-MR GaN Power Transistor -- GS-065-011-6-L-TR GaN Power Transistor -- GS-065-011-6-LR-MR GaN Power Transistor -- GS-065-011-6-LR-TR GaN Power Transistor -- GS-065-014-6-L-MR GaN Power Transistor -- GS-065-014-6-L-TR GaN Power Transistor -- GS-065-014-6-LR-MR GaN Power Transistor -- GS-065-014-6-LR-TR GaN Power Transistor -- GS-065-018-6-LR-MR GaN Power Transistor -- GS-065-018-6-LR-TR GaN Power Transistor -- GS-065-030-6-LL-MR GaN Power Transistor -- GS-065-030-6-LL-TR GaN Power Transistor -- GS-065-030-6-LR-MR GaN Power Transistor -- GS-065-030-6-LR-TR GaN Power Transistor -- GS-065-030-6-LT-MR GaN Power Transistor -- GS-065-030-6-LT-TR GaN Power Transistor -- GS66506T-TR Power IGBT Transistor -- CM1000DX-24T Power IGBT Transistor -- CM1000DX-24T#330G Power IGBT Transistor -- CM1000DXL-24S Power IGBT Transistor -- CM1000HA-34S Power IGBT Transistor -- CM1000HG-130XA Power IGBT Transistor -- CM100DY-13T Power IGBT Transistor -- CM100DY-13T#330G Power IGBT Transistor -- CM100DY-24T Power IGBT Transistor -- CM100DY-24T#330G Power IGBT Transistor -- CM100DY-34T Power IGBT Transistor -- CM100DY-34T#330G Power IGBT Transistor -- CM100MXUB-13T Power IGBT Transistor -- CM100MXUB-13T1 Power IGBT Transistor -- CM100MXUC-24T Power IGBT Transistor -- CM100MXUC-24T1 Power IGBT Transistor -- CM100MXUD-13T Power IGBT Transistor -- CM100MXUD-13T1 Power IGBT Transistor -- CM100RX-24T Power IGBT Transistor -- CM100RX-24T#330G Power IGBT Transistor -- CM100TX-13T Power IGBT Transistor -- CM100TX-13T#330G Power IGBT Transistor -- CM100TX-24T Power IGBT Transistor -- CM100TX-24T#330G Power IGBT Transistor -- CM100TX-34T Power IGBT Transistor -- CM100TX-34T#330G Power IGBT Transistor -- CM1400HA-24S Power IGBT Transistor -- CM150DY-13T Power IGBT Transistor -- CM150DY-13T#330G Power IGBT Transistor -- CM150DY-24T Power IGBT Transistor -- CM150DY-24T#330G Power IGBT Transistor -- CM150DY-34T#330G Power IGBT Transistor -- CM150MXUD-13T Power IGBT Transistor -- CM150MXUD-13T1 Power IGBT Transistor -- CM150MXUD-24T Power IGBT Transistor -- CM150MXUD-24T1 Power IGBT Transistor -- CM150RX-13T#330G Power IGBT Transistor -- CM150RX-24S1 Power IGBT Transistor -- CM150RX-24T Power IGBT Transistor -- CM150RX-24T#330G Power IGBT Transistor -- CM150TX-13T Power IGBT Transistor -- CM150TX-13T#330G Power IGBT Transistor -- CM150TX-24T Power IGBT Transistor -- CM150TX-24T#330G Power IGBT Transistor -- CM150TX-34T Power IGBT Transistor -- CM150TX-34T#330G Power IGBT Transistor -- CM1600HC-34H Power IGBT Transistor -- CM1800HC-66X Power IGBT Transistor -- CM200DY-13T Power IGBT Transistor -- CM200DY-13T#300U Power IGBT Transistor -- CM200DY-13T#330G Power IGBT Transistor -- CM200DY-24T Power IGBT Transistor -- CM200DY-24T#300G Power IGBT Transistor -- CM200DY-24T#330G Power IGBT Transistor -- CM200DY-34T Power IGBT Transistor -- CM200DY-34T#330G Power IGBT Transistor -- CM200RX-13T#330G Power IGBT Transistor -- CM200TX-13T#330G Power IGBT Transistor -- CM200TX-24T Power IGBT Transistor -- CM200TX-24T#330G Power IGBT Transistor -- CM225DX-24T Power IGBT Transistor -- CM225DX-24T#330G Power IGBT Transistor -- CM225DX-34T Power IGBT Transistor -- CM225DX-34T#130G Power IGBT Transistor -- CM225DX-34T#330G Power IGBT Transistor -- CM300DX-13T Power IGBT Transistor -- CM300DX-13T#330G Power IGBT Transistor -- CM300DX-24T Power IGBT Transistor -- CM300DX-24T#330G Power IGBT Transistor -- CM300DX-24T1 Power IGBT Transistor -- CM300DX-34SA Power IGBT Transistor -- CM300DX-34T Power IGBT Transistor -- CM300DX-34T#110G Power IGBT Transistor -- CM300DX-34T#330G Power IGBT Transistor -- CM300DXP-24T1 Power IGBT Transistor -- CM300DY-13T Power IGBT Transistor -- CM300DY-13T#330G Power IGBT Transistor -- CM300DY-24T Power IGBT Transistor -- CM300DY-24T#330G Power IGBT Transistor -- CM300DY-34T Power IGBT Transistor -- CM300DY-34T#330G Power IGBT Transistor -- CM35MXUA-24T Power IGBT Transistor -- CM35MXUA-24T1 Power IGBT Transistor -- CM400DY-13T Power IGBT Transistor -- CM400DY-13T#300U Power IGBT Transistor -- CM400DY-13T#330G Power IGBT Transistor -- CM400DY-34T Power IGBT Transistor -- CM400DY-34T#330G Power IGBT Transistor -- CM400E2G-130H Power IGBT Transistor -- CM450DA-66X Power IGBT Transistor -- CM450DX-13T#330G Power IGBT Transistor -- CM450DX-24T#330G Power IGBT Transistor -- CM450DX-34T#110G Power IGBT Transistor -- CM450DX-34T#330G Power IGBT Transistor -- CM450DXP-24T1 Power IGBT Transistor -- CM450DY-24T#110G Power IGBT Transistor -- CM450DY-24T#330G Power IGBT Transistor -- CM500C2Y-24S Power IGBT Transistor -- CM50MXUA-24T Power IGBT Transistor -- CM50MXUA-24T1 Power IGBT Transistor -- CM50MXUAP-24T Power IGBT Transistor -- CM50MXUAP-24T1 Power IGBT Transistor -- CM50MXUB-13T Power IGBT Transistor -- CM50MXUB-13T1 Power IGBT Transistor -- CM600DX-13T Power IGBT Transistor -- CM600DX-13T#330G Power IGBT Transistor -- CM600DX-24T#330G Power IGBT Transistor -- CM600DX-34T#330G Power IGBT Transistor -- CM600DX-34T#340G Power IGBT Transistor -- CM600DY-13T#330G Power IGBT Transistor -- CM600DY-24T#330G Power IGBT Transistor -- CM600HA-34S Power IGBT Transistor -- CM600HG-130X Power IGBT Transistor -- CM750HG-130R Power IGBT Transistor -- CM75DY-34T#330G Power IGBT Transistor -- CM75MXA-34SA Power IGBT Transistor -- CM75MXUB-13T Power IGBT Transistor -- CM75MXUB-13T1 Power IGBT Transistor -- CM75MXUB-24T Power IGBT Transistor -- CM75MXUB-24T1 Power IGBT Transistor -- CM75MXUC-24T Power IGBT Transistor -- CM75MXUC-24T1 Power IGBT Transistor -- CM800DW-24T Power IGBT Transistor -- CM800DXP-24T1 Power IGBT Transistor -- CM800HA-34S Power IGBT Transistor -- CM900HG-130X Power IGBT Transistor -- CMIEGLQ75TA120TPG Power IGBT Transistor -- CMIEGTQ100V65CX Power IGBT Transistor -- CMMVGF100V120T3AG Power IGBT Transistor -- CMSEGF50DU120TX Power IGBT Transistor -- EXT-P927-F53T_TC Power IGBT Transistor -- GD100HFY120C1S Power IGBT Transistor -- GD3600SGL170A4S Power IPM Transistor -- CM1200DW-24T Power IPM Transistor -- CM1200DW-34T Power IPM Transistor -- CM1200DW-40T Power IPM Transistor -- CM800DW-34T Power IPM Transistor -- DPBG406K2W437B5AT42 RF Power Transistor -- CGHV59350P RF Power Transistor -- CGHV60075D5 RF Power Transistor -- CLF24H4LS300PJ RF Power Transistor -- CLF24H4LS300PU RF Power Transistor -- CLF3H0035-100U RF Power Transistor -- CLL3H0914L-700U RF Power Transistor -- CLP24H4S30PXY RF Power Transistor -- D1001UK RF Power Transistor -- D1003UK RF Power Transistor -- D1005UK RF Power Transistor -- D1007UK RF Power Transistor -- D1008UK RF Power Transistor -- D1009UK RF Power Transistor -- D1010UK RF Power Transistor -- D1011UK RF Power Transistor -- D1011UKTR RF Power Transistor -- D1012UK RF Power Transistor -- D1013UK RF Power Transistor -- D1014UK RF Power Transistor -- D1016UK RF Power Transistor -- D1017UK RF Power Transistor -- D1018UK RF Power Transistor -- D1020UK RF Power Transistor -- D1021UK RF Power Transistor -- D1022UK RF Power Transistor -- D1023UK RF Power Transistor -- D1025UK RF Power Transistor -- D1029UK RF Power Transistor -- D1030UK RF Power Transistor -- D1034UK RF Power Transistor -- D1040UK RF Power Transistor -- D1053UK RF Power Transistor -- D1094UK RF Power Transistor -- D2001UK RF Power Transistor -- D2002UK RF Power Transistor -- D2003UK RF Power Transistor -- D2004UK RF Power Transistor -- D2005UK RF Power Transistor -- D2006UK RF Power Transistor -- D2007UK RF Power Transistor -- D2009UK RF Power Transistor -- D2012UK RF Power Transistor -- D2013UK RF Power Transistor -- D2014UK RF Power Transistor -- D2015UK RF Power Transistor -- D2019UK RF Power Transistor -- D2020UK RF Power Transistor -- D2021UK RF Power Transistor -- D2081UK.F RF Power Transistor -- D2081UK.FTR RF Power Transistor -- D2089UK RF Power Transistor -- D2201UK RF Power Transistor -- D2202UK RF Power Transistor -- D2203UK RF Power Transistor -- D2205UK RF Power Transistor -- D2207UK RF Power Transistor -- D2208UK RF Power Transistor -- D2210UK RF Power Transistor -- D2212UK RF Power Transistor -- D2213UK RF Power Transistor -- D2214UK RF Power Transistor -- D2219UKT/R RF Power Transistor -- D2220UK RF Power Transistor -- D2221UK RF Power Transistor -- D2224UK RF Power Transistor -- D2225UK RF Power Transistor -- D2229UK RF Power Transistor -- D2229UKTR RF Power Transistor -- D2230UK RF Power Transistor -- D2241UK RF Power Transistor -- D2254UK RF Power Transistor -- D2282UK.F RF Power Transistor -- D2290UK RF Power Transistor -- D2294UK RF Power Transistor -- D5001UK RF Power Transistor -- D5002UK RF Power Transistor -- D5006UK RF Power Transistor -- D5011UK RF Power Transistor -- D5017UK RF Power Transistor -- D5030UK RF Power Transistor -- DMD1020 RF Power Transistor -- DRF1211 RF Power Transistor -- DRF1311 RF Power Transistor -- DRF1410 RF Power Transistor -- DRF1510 RF Power Transistor -- DU1215S RF Power Transistor -- DU2805S RF Power Transistor -- DU2810S RF Power Transistor -- DU28120T RF Power Transistor -- DU28120V RF Power Transistor -- DU28200M RF Power Transistor -- DU2820S RF Power Transistor -- DU2840S RF Power Transistor -- DU2860T RF Power Transistor -- DU2860U RF Power Transistor -- DU2880T RF Power Transistor -- DU2880U RF Power Transistor -- DU2880V RF Power Transistor -- FH2164 RF Power Transistor -- GRF5923 RF Power Transistor -- GTRA184602FC-V1-R2 RF Power Transistor -- GTRA214602FC-V1-R0 RF Power Transistor -- GTRA262802FC-V2-R2 RF Power Transistor -- GTRA263902FC-V2-R2 RF Power Transistor -- GTRA264002FC-V1-R2 RF Power Transistor -- GTRA264002FC-V1-RO RF Power Transistor -- GTRA374902FC-V1-R2 RF Power Transistor -- GTRA384802FC-V1-R2 RF Power Transistor -- GTRA412852FC-V1-R0 RF Power Transistor -- GTRA412852FC-V1-R2 RF Power Transistor -- GTRB097152FC-V1-R2 RF Small Signal Transistor pHEMT -- EC2612-99S Silicon Carbide MOSFET Modules -- CLB650M17HM3 Silicon Carbide MOSFET Modules -- CLB650M17HM3T Silicon Carbide MOSFET Modules -- CLB800M12HM3P Silicon Carbide MOSFET Modules -- CLB800M12HM3PT Silicon Carbide MOSFET Modules -- CMIEDCG20V1201G Silicon Carbide MOSFET Modules -- FMF200DC-66BE Silicon Carbide MOSFET Modules -- FMF300DXZ-34B Silicon Carbide MOSFETs -- CPM3-0900-0010A Silicon Carbide MOSFETs -- E3M0016120U2-TR Silicon Carbide MOSFETs -- E3M0032120U2-TR Silicon Carbide MOSFETs -- E3M0040120U2-TR Silicon Carbide MOSFETs -- E3M0075120U2-TR Silicon Carbide MOSFETs -- E4M0045075J2-TR Silicon Carbide MOSFETs -- E4M0060075J2-TR Silicon Carbide MOSFETs -- E4MS047120J2-TR Silicon Carbide MOSFETs -- E4MS047120K Silicon Carbide MOSFETs -- E4MS047120U2-TR Silicon Carbide MOSFETs -- E4MS065120J2-TR Silicon Carbide MOSFETs -- E4MS065120K Silicon Carbide MOSFETs -- E4MS065120U2-TR Silicon Carbide MOSFETs -- EPM3-1200-0014D1-GQ8 Silicon Carbide MOSFETs -- EPM3-1200-0017D-FY6 Silicon Carbide/Silicon Hybrid Modules -- CMH100DY-24NFH Silicon Carbide/Silicon Hybrid Modules -- CMH150DY-24NFH Silicon Carbide/Silicon Hybrid Modules -- CMH200DU-24NFH Silicon Carbide/Silicon Hybrid Modules -- CMH400DU-24NFH Silicon Carbide/Silicon Hybrid Modules -- CMH600DU-24NFH Silicon Carbide/Silicon Hybrid Modules -- EXT-P955-A90_TC6	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon Carbide MOSFETs -- CPM3-0650-0015A	SiC DMOSFET, 650V Vds, RDS On 15 mOhm, Al Source, Ni/Au Drain 8""
Silicon Carbide MOSFETs -- CPM3-0650-0045A	SiC DMOSFET, 650V Vds, RDS On 45 mOhm, Al Source, Ni/Au Drain 8""
Silicon Carbide MOSFETs -- EM40120-026JS0	SiC MOSFET G4 AUTO 1200V/14mO MLT
Silicon Carbide MOSFETs -- E4M0015075U2-TR	SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E3M0160120U2-TR	SiC, MOSFET, 160 mOhm,1200V, TSC (U2) , Automotive
Silicon Carbide MOSFETs -- E3M0021120U2-TR	SiC, MOSFET, 21 mOhm,1200V, TSC (U2) , Automotive
Silicon Carbide MOSFETs -- E4MS025120K	SiC, MOSFET, 25 mOhm, 1200V, TO-247-4, Automotive, Gen4
Silicon Carbide MOSFETs -- E4MS025120J2-TR	SiC, MOSFET, 25 mOhm,1200V, TO-263-7 XL T&R , Automotive, Gen4
Silicon Carbide MOSFETs -- E4MS025120U2-TR	SiC, MOSFET, 25 mOhm,1200V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E4M0025075U2-TR	SiC, MOSFET, 25 mOhm,750V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E4MS036120K	SiC, MOSFET, 36 mOhm, 1200V, TO-247-4, Automotive, Gen4
Silicon Carbide MOSFETs -- E4M0045075U2-TR	SiC, MOSFET, 45 mOhm,750V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E4M0060075U2-TR	SiC, MOSFET, 60 mOhm,750V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E4MS036120J2-TR	SiC, MOSFET,36 mOhm,1200V, TO-263-7 XL T&R , Automotive, Gen4
Silicon Carbide MOSFETs -- E4MS036120U2-TR	SiC, MOSFET,36 mOhm,1200V, TSC (U2) , Automotive, Gen4
Silicon Carbide MOSFETs -- E3M0060065D	Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide MOSFETs -- E3M0120090J Silicon Carbide MOSFETs -- E3M0120090J-TR	Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse...
Silicon Carbide MOSFETs -- E3M0021120J2-TR Silicon Carbide MOSFETs -- E3M0032120J2-TR Silicon Carbide MOSFETs -- E3M0040120J2-TR Silicon Carbide MOSFETs -- E3M0160120J2-TR	Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High...
Power IGBT Transistor -- CM100RX-24S	Six IGBTMOD™ + Brake NX-S Series Module 100 Amperes/1200 Volts. Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three...
RF Power Transistor -- CHK015AAQIA/20	The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK5010-99F/00	The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The...
RF Power Transistor -- CHK8013-99F	The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHK8015-99F	The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety...
RF Power Transistor -- CHK8101-SYC/26	The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK8101A99F	The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHK8201-SYA	The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA...
RF Power Transistor -- CHK9013-99F	The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHK9014-99F	The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHKA011ASXA/26	The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHKA012A99F	The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHKA012BSYA	The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is...
RF Power Transistor -- CHZ015AAQEG/20	The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well...
RF Power Transistor -- CHZ180AASEB	The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It...
RF Power Transistor -- CHZ8012-QJA/20	The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can...
RF Power Transistor -- CHZ9012-QFA	The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC...
RF Power Transistor -- DC35GN-15-D3	The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
RF Power Transistor -- DC35GN-15-Q4	The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN...
RF Power Transistor -- DRF1200	The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1201	The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1203	The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1300	The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- DRF1301	The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Small Signal Transistor pHEMT -- EC2612-99F	The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminum gate features low resistance and...
RF Power Transistor -- GRF0020	The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. The wide bandwidth of the GRF0020 makes it suitable...
RF Power Transistor -- GRF0020D	The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable...
RF Power Transistor -- GRF0030	The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030 makes it suitable...
RF Power Transistor -- GRF0030D	The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable...
GaN Power Transistor -- GS-065-004-1-L-MR	The GS-065-004-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-008-1-L-MR GaN Power Transistor -- GS-065-008-1-L-TR	The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-011-1-L-E01-B GaN Power Transistor -- GS-065-011-1-L-MR	The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-018-2-L-MR GaN Power Transistor -- GS-065-018-2-L-TR	The GS-065-018-2-L is a 650V, 18A, 78 mOhm bottom-side cooled transistor ideal for smaller and lighter consumer adapters for laptops and gaming consoles and higher power density and efficiency in...
GaN Power Transistor -- GS-065-060-5-B-A-MR GaN Power Transistor -- GS-065-060-5-B-A-TR	The GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to...
GaN Power Transistor -- GS-065-060-5-T-A-MR GaN Power Transistor -- GS-065-060-5-T-A-TR	The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates...
GaN Power Transistor -- GS-065-080-1-D-E01 GaN Power Transistor -- GS-065-080-1-D2-E01	The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
GaN Power Transistor -- GS-065-150-1-D-E01 GaN Power Transistor -- GS-065-150-1-D2-E01	The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
GaN Power Transistor -- GS66508P-MR	The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS66516B-E01-MR	The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
RF Power Transistor -- GTRA184602FC-V1-R0	The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA262802FC-V2-R0	The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency,...
RF Power Transistor -- GTRA263902FC-V2-R0	The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA362002FC-V1-R0	The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA362802FC-V1-R0	The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA364002FC-V1-R0	The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA374902FC-V1-R0	The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA384802FC-V1-R0	The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,...
RF Power Transistor -- GTRB097152FC-V1-R0	The GTRB097152FC-V1 is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced...
Silicon Carbide MOSFETs -- CPM4-0230-0255ES0A-GQ8	This is the Wolfspeed’s 4th generation of high performance silicon carbide MOSFET in a package less bare die format to be implemented into any custom module design. The high blocking...
Silicon Carbide MOSFETs -- CPM4-0120-0104JS0A Silicon Carbide MOSFETs -- CPM4-0120-0149JS0A	This is the Wolfspeed’s 4th generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage...
Power IGBT Transistor -- CM150DY-34T Power IGBT Transistor -- CM450C1Y-24T Power IGBT Transistor -- CM600C1Y-24T Power IGBT Transistor -- CM75DY-34T	Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585
Power IGBT Transistor -- CM150RX-13T Power IGBT Transistor -- CM200RX-13T Power IGBT Transistor -- CM200TX-13T Power IGBT Transistor -- CM450DX-13T	Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals
Power IGBT Transistor -- CM100TXP-34T Power IGBT Transistor -- CM150TXP-34T Power IGBT Transistor -- CM225DXP-34T Power IGBT Transistor -- CM300DXP-34T Power IGBT Transistor -- CM450DXP-34T Power IGBT Transistor -- CM600DXP-34T	Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals

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