Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name	Notes
Power MOSFET Transistor -- FM400TU-3A	150V, 200A, Insulated type 6-element pack, NTC Thermistor inside
RF Power Transistor -- D2219UK	2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
Silicon Carbide MOSFETs -- MSC025SMA330B4	3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize...
GaN Power Transistor -- GS-065-030-2-L-MR	650 V E-mode GaN on Silicon bottom side cooled power transistor that offers very low junction to case thermal resistance for demanding high power applications and very high efficiency power...
GaN Power Transistor -- GS-065-011-2-L-MR GaN Power Transistor -- GS-065-011-2-L-TR	650V Enhancement Mode GaN Transistor The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN...
GaN Power Transistor -- GS-065-060-3-B-MR	650V Enhancement Mode GaN Transistor The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN...
Silicon Carbide MOSFETs -- MSC060SMA070SCT/R	700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source...
Silicon Carbide MOSFET Modules -- EAB450M12XM3	Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized , Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements...
Silicon Carbide/Silicon Hybrid Modules -- MSCC60VRM99CT3AG	Features Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged SiC Schottky diode Zero reverse recovery Zero forward recovery Temp. Independent...
Silicon Carbide/Silicon Hybrid Modules -- MSCGTQ100HD65C1AG	Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ50A120CTBL1NG Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ50DDU120CTBL2NG Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ50DH120CTBL2NG Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ50H120CTBL2NG Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ75DDU120CTBL3NG Silicon Carbide/Silicon Hybrid Modules -- MSCGLQ75H120CTBL3NG	Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Silicon Carbide MOSFETs -- MSC015SMA070J Silicon Carbide MOSFETs -- MSC035SMA070B Silicon Carbide MOSFETs -- MSC040SMA120S/TR Silicon Carbide MOSFETs -- MSC080SMA120B Silicon Carbide MOSFETs -- MSC080SMA120SA Silicon Carbide MOSFETs -- MSC180SMA120B	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Silicon Carbide MOSFETs -- MSC025SMA330B4N	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable...
Silicon Carbide/Silicon Hybrid Modules -- MSCC60AM23C4AG	Features Super junction MOSFET: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Silicon Carbide MOSFETs -- E3M0900170D	Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low on-resistance High speed switching with low capacitances 12V...15V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate...
Silicon Carbide MOSFET Modules -- ECB2R1M12YM3 Silicon Carbide MOSFET Modules -- ECB2R8M12YM3 Silicon Carbide MOSFET Modules -- ECB4R3M12YM3	Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6...
Silicon Carbide MOSFET Modules -- HAS175M12BM3T Silicon Carbide MOSFET Modules -- HAS310M17BM3 Silicon Carbide MOSFET Modules -- HAS310M17BM3T Silicon Carbide MOSFET Modules -- HAS350M12BM3T Silicon Carbide MOSFET Modules -- HAS530M12BM3T	Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe...
Overvoltage Braking Transistor -- M3452-D1200CK10-R7 Overvoltage Braking Transistor -- M3452-D600CK6-R7E Overvoltage Braking Transistor -- M3452-E1600M14-R7 Overvoltage Braking Transistor -- M3452-H1200K10-R7 Overvoltage Braking Transistor -- M3452-H9C-R050 Overvoltage Braking Transistor -- M3452-H9C-R108 Overvoltage Braking Transistor -- M3452-L150N1200B7-A Overvoltage Braking Transistor -- M3452-L200N1200K6-A Overvoltage Braking Transistor -- M3452-L200N1200K6-R5 Overvoltage Braking Transistor -- M3452-L75N1200B7-A Overvoltage Braking Transistor -- M3452-U1200YK10-R7E Overvoltage Braking Transistor -- M3452-U150YB7-A Overvoltage Braking Transistor -- M3452-U1600HM14-R7 Overvoltage Braking Transistor -- M3452-U1600HM14-R7E Overvoltage Braking Transistor -- M3452-U1600YM14-R7 Overvoltage Braking Transistor -- M3452-U1600YM14-R7EIP Overvoltage Braking Transistor -- M3452-U600YK6-A Overvoltage Braking Transistor -- M3452-U600YK6-R7E Overvoltage Braking Transistor -- M3452-U800YK9-R7E	Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works...
Overvoltage Braking Transistor -- M3575T-H600-N77	Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3575T and...
Overvoltage Braking Transistor -- M3452-E300K6-A	Bonitron Braking Transistors are used with AC drives to allow full power brakingand eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works with...
Overvoltage Braking Transistor -- M3452-U200YK6-A Overvoltage Braking Transistor -- M3452-U800YK9-A	Bonitron M3345 Line Regens are the energy efficient way to prevent overvoltage faults on AC Drives. By returning energy to the AC supply line, energy is reclaimed that would otherwise...
Overvoltage Braking Transistor -- M3452-C150B7-A Overvoltage Braking Transistor -- M3452-C1600M14-R7E Overvoltage Braking Transistor -- M3452-C600K6-R7E Overvoltage Braking Transistor -- M3452-H8C-R018 Overvoltage Braking Transistor -- M3452-U1200HK10-R7 Overvoltage Braking Transistor -- M3452-U800HK9R7	Combination Braking Modules are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. Bonitron Combination Braking...
GaN Power Transistor -- INN040FQ043A-Q GaN Power Transistor -- INN080LA080A-Q GaN Power Transistor -- INN100W135A-Q GaN Power Transistor -- INN650T050AH GaN Power Transistor -- INN650TA30AH	Currently not available for sale in the U.S.
GaN Power Transistor -- ISG3201	Currently not available for sale in the U.S. 100V Half-Bridge Solid-GaN Integrating Gate Driver The ISG3201 is a 100V Copak product in Innoscience’s SolidGaN family. It integrates two 100V enhancement...
GaN Power Transistor -- INN650DA140A GaN Power Transistor -- INN650DA190A GaN Power Transistor -- INN650DA240A GaN Power Transistor -- INN650DA350A GaN Power Transistor -- INN650DA500A GaN Power Transistor -- INN650DA600A	Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm x 6 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN650D350A	Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN650TA050AH GaN Power Transistor -- INN650TA070AH	Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in TOLL package Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge...
GaN Power Transistor -- INN700DA190B GaN Power Transistor -- INN700DA350B GaN Power Transistor -- INN700DA600B GaN Power Transistor -- INN700DC140A GaN Power Transistor -- INN700DC240A GaN Power Transistor -- INN700DC350A	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN700D140C GaN Power Transistor -- INN700D190C GaN Power Transistor -- INN700D240C	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size Features Enhancement mode transistor-Normally...
GaN Power Transistor -- INN700TK190B GaN Power Transistor -- INN700TK240B GaN Power Transistor -- INN700TK350B GaN Power Transistor -- INN700TK480B GaN Power Transistor -- INN700TK600B	Currently not available for sale in the U.S. 700V GaN-on-Silicon Enhancement-mode Power Transistor in TO-252 package Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge...
GaN Power Transistor -- INN040W048A	Currently not available for sale in the U.S. Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance. Features Bi-directional blocking capability...
GaN Power Transistor -- INN040FQ012A	Currently not available for sale in the U.S. Bi-directional GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 6mm x 4 mm package size. Features Bi-directional blocking capability GaN-on-Silicon E-mode...
GaN Power Transistor -- INN100EQ025A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 3.0 mm x 5.0 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN150EQ032A GaN Power Transistor -- INN150EQ070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0 mm package size Features GaN-on-Silicon E-mode HEMT technology Industry...
GaN Power Transistor -- INN100EQ016A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0mm package size Features GaN-on-Silicon E-mode HEMT technology Very low...
GaN Power Transistor -- INN040LA015A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCLGA with 5 mm x 4 mm package size. Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN040FQ045A-Q	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size Features AEC-Q101 Qualified GaN-on-Silicon E-mode HEMT...
GaN Power Transistor -- INN040FQ043A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN100FQ016A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN030FQ015A GaN Power Transistor -- INN040FQ015A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size Features GaN-on-Silicon E-mode HEMT technology Very...
GaN Power Transistor -- INN150LA070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size Features GaN-on-Silicon E-mode...
GaN Power Transistor -- INN100W070A	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in Solder Bar WLCSP with 2.5 mm x 1.5 mm package size. Features GaN-on-Silicon E-mode HEMT...
GaN Power Transistor -- INN100W14	Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) with ultra-low on resistance. Features GaN-on-Silicon E-mode HEMT technology Dual Channels, Common Source Ultra High Switching...
RF Power Transistor -- MRFE6S9060NR1	Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MRF141 RF Power Transistor -- MRF141G RF Power Transistor -- MRF151A	Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF173	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF173CQ	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF177	Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU RF Power Transistor -- MRF175GV RF Power Transistor -- MRF176GU RF Power Transistor -- MRF176GV	Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF175LU	Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
RF Power Transistor -- MRF275L	Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
RF Power Transistor -- MMRF1014NT1	Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MRF148A	Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
RF Power Transistor -- MRF158	Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136Y	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF134	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
RF Power Transistor -- MRF137	Designed for wideband large-signal output and driver stages up to 400 MHz range.
RF Power Transistor -- MRF448A	Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF154	Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157	Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF140	Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
RF Power Transistor -- MRF150	Designed primarily for linear large-signal output stages up to150 MHz frequency range.
RF Power Transistor -- MRF160 RF Power Transistor -- MRF166C	Designed primarily for wideband large-signal output and driver from 30-500 MHz.
RF Power Transistor -- MRF275G	Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- MRF171A	Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
RF Power Transistor -- MRF166W	Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
RF Power Transistor -- MRF174	Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
Silicon Carbide MOSFETs -- E3M0075120D	Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant...
Silicon Carbide MOSFETs -- E3M0045065K Silicon Carbide MOSFETs -- E3M0075120K	Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Power IGBT Transistor -- MSCGLQ50DU120CTBL1NG	Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Silicon Carbide MOSFETs -- MSC015SMA070B Silicon Carbide MOSFETs -- MSC017SMA120B Silicon Carbide MOSFETs -- MSC017SMA120B4 Silicon Carbide MOSFETs -- MSC017SMA120J Silicon Carbide MOSFETs -- MSC017SMA120S Silicon Carbide MOSFETs -- MSC025SMA120B Silicon Carbide MOSFETs -- MSC035SMA170B Silicon Carbide MOSFETs -- MSC035SMA170B4 Silicon Carbide MOSFETs -- MSC040SMA120J Silicon Carbide MOSFETs -- MSC040SMA120S Silicon Carbide MOSFETs -- MSC090SMA070SA Silicon Carbide MOSFETs -- MSC180SMA120S Silicon Carbide MOSFETs -- MSC180SMA120SA Silicon Carbide MOSFETs -- MSC360SMA120B Silicon Carbide MOSFETs -- MSC360SMA120S Silicon Carbide MOSFETs -- MSC360SMA120SA Silicon Carbide MOSFETs -- MSC750SMA170S	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Silicon Carbide MOSFETs -- MSC035SMA170S	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable...
Silicon Carbide MOSFETs -- MSC2X50SDA170J Silicon Carbide MOSFETs -- MSC2X51SDA170J	Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink...
Silicon Carbide MOSFET Modules -- MSC100SM70JCU2 Silicon Carbide MOSFET Modules -- MSC100SM70JCU3	Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF...
Silicon Carbide MOSFET Modules -- MSC40SM120JCU2 Silicon Carbide MOSFET Modules -- MSC40SM120JCU3 Silicon Carbide MOSFET Modules -- MSC70SM120JCU2 Silicon Carbide MOSFET Modules -- MSC70SM120JCU3	Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance...
Silicon Carbide MOSFET Modules -- MSC130SM120JCU2 Silicon Carbide MOSFET Modules -- MSC130SM120JCU3	Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits...
Silicon Carbide MOSFET Modules -- MSCGLQ100X065CTYZBNMG Silicon Carbide MOSFET Modules -- MSCGLQ50X065CTYZBNMG Silicon Carbide MOSFET Modules -- MSCGLQ50X120CTYZBNMG Silicon Carbide MOSFET Modules -- MSCGLQ75X065CTYZBNMG Silicon Carbide MOSFET Modules -- MSCGLQ75X120CTYZBNMG	Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage...
Silicon Carbide MOSFET Modules -- MSCMC120AM02CT6LIAG Silicon Carbide MOSFET Modules -- MSCMC120AM03CT6LIAG	Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
Power IGBT Transistor -- FZ12NMA080SH-M269F	FlowmNPC0. Mixed voltage component topology. Neutral point clamped inverter. Reactive power capability. Low inductance layout.
RF Power Transistor -- MAGX-011086	GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
RF Power Transistor -- D2216UK	Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
Overvoltage Braking Transistor -- M3452-C200K6,A Overvoltage Braking Transistor -- M3452-C600K3,A Overvoltage Braking Transistor -- M3452-C600K6,A Overvoltage Braking Transistor -- M3452-H200K6,A Overvoltage Braking Transistor -- M3452-H300K6 Overvoltage Braking Transistor -- M3452-H300K6,A Overvoltage Braking Transistor -- M3452-H600K6 Overvoltage Braking Transistor -- M3452-H600K6,A Overvoltage Braking Transistor -- M3452-H800K9 Overvoltage Braking Transistor -- M3452-H800K9,A Overvoltage Braking Transistor -- M3452-U300CK6,A Overvoltage Braking Transistor -- M3452-U600CK6,A Overvoltage Braking Transistor -- M3452-U600HK6,A Overvoltage Braking Transistor -- M3452-U800CK9 Overvoltage Braking Transistor -- M3452-U800CK9,A	Heavy Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Braking Transistor and Braking Resistor modules are used with AC drives to eliminate overvoltage faults. The use of these modules...
RF Power Transistor -- MMRF1305HSR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
RF Power Transistor -- MMRF1306HR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
RF Power Transistor -- MRFE6VP61K25HR5	High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- MRF455	In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- MMRF1312GSR5	MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HR5	MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HSR5	MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRFE6VP6300HSR5	N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- MMRF1020-04GNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- MMRF1004GNR1	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- MMRF1007HSR5 RF Power Transistor -- MMRF1008HR5	N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- DMD1028	New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
RF Power Transistor -- DRF1400	RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
RF Power Transistor -- MRF6V10010NR4	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device...
RF Power Transistor -- MRF6V14300HR5 RF Power Transistor -- MRF6V14300HSR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRF6V12500HR5 RF Power Transistor -- MRF6V12500HSR5	RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- MRFE6VS25LR5	RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- MRF6V12250HR5 RF Power Transistor -- MRF6V12250HSR5 RF Power Transistor -- MRF6VP121KHR5	RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
GaN Power Transistor -- GS66506T-TR GaN Power Transistor -- ISG6123TH GaN Power Transistor -- ISG6124TH Overvoltage Braking Transistor -- M3452-E150B7-A Power BJT Transistor -- JANTX2N2222AUA Power BJT Transistor -- JANTX2N2905A Power BJT Transistor -- JANTX2N2907AUA Power BJT Transistor -- JANTX2N3421 Power BJT Transistor -- JANTX2N5339 Power FREDFET Transistor -- MSCM20XM10T3XG Power FREDFET Transistor -- MSCM20XM16F4G Power IGBT Transistor -- EXT-P927-F53T_TC Power IGBT Transistor -- MDB6U600/810-750F,08473063AA Power IGBT Transistor -- MSCDCW250A120AG Power IGBT Transistor -- MSCDCW600AA120AG Power IGBT Transistor -- MSCGL40X120T3AG Power IGBT Transistor -- MSCGLQ200A120DG Power IGBT Transistor -- MSCGLQ200A65TG Power IGBT Transistor -- MSCM10AU40AG Power IPM Transistor -- DPBG406K2W437B5AT42 Power MOSFET Transistor -- FM400TU-2A Power MOSFET Transistor -- FM600TU-07A Power MOSFET Transistor -- FM600TU-2A Power MOSFET Transistor -- FM600TU-3A Power MOSFET Transistor -- IPS5451S Power MOSFET Transistor -- IRF510PBF Power MOSFET Transistor -- IRF740 Power MOSFET Transistor -- MSCC60VRM45TAPG Power MOSFET Transistor -- MSCM20AM058G RF Power Transistor -- D2207UK RF Power Transistor -- D2208UK RF Power Transistor -- D2210UK RF Power Transistor -- D2212UK RF Power Transistor -- D2213UK RF Power Transistor -- D2214UK RF Power Transistor -- D2219UKT/R RF Power Transistor -- D2220UK RF Power Transistor -- D2221UK RF Power Transistor -- D2224UK RF Power Transistor -- D2225UK RF Power Transistor -- D2229UK RF Power Transistor -- D2229UKTR RF Power Transistor -- D2230UK RF Power Transistor -- D2241UK RF Power Transistor -- D2254UK RF Power Transistor -- D2282UK.F RF Power Transistor -- D2290UK RF Power Transistor -- D2294UK RF Power Transistor -- D5001UK RF Power Transistor -- D5002UK RF Power Transistor -- D5006UK RF Power Transistor -- D5011UK RF Power Transistor -- D5017UK RF Power Transistor -- D5030UK RF Power Transistor -- DMD1020 RF Power Transistor -- DRF1211 RF Power Transistor -- DRF1410 RF Power Transistor -- DRF1510 RF Power Transistor -- DU1215S RF Power Transistor -- DU2805S RF Power Transistor -- DU2810S RF Power Transistor -- DU28120T RF Power Transistor -- DU28120V RF Power Transistor -- DU28200M RF Power Transistor -- DU2820S RF Power Transistor -- DU2840S RF Power Transistor -- DU2860T RF Power Transistor -- DU2860U RF Power Transistor -- DU2880T RF Power Transistor -- DU2880U RF Power Transistor -- DU2880V RF Power Transistor -- FH2164 RF Power Transistor -- GTRB097152FC-V1-R2 RF Power Transistor -- GTRB226002FC-V1-R2 RF Power Transistor -- ICPB1010-1-110I RF Power Transistor -- ICPB1020-1-110I RF Power Transistor -- ICPB2002-1-110I RF Power Transistor -- ICPB2005-1-110I RF Power Transistor -- LF2805A RF Power Transistor -- MAGB-103338-050S0P RF Power Transistor -- MAPC-A2004-BDTR1 RF Power Transistor -- MAPHST0045 RF Power Transistor -- MAPR-000912-500S00 RF Power Transistor -- MAPR-002729-170M00 RF Power Transistor -- MAPRST0912-350 RF Power Transistor -- MAPRST0912-50 RF Power Transistor -- MAPRST1030-1KS RF Power Transistor -- MATR-001214-XL4200 RF Power Transistor -- MATR-002735-637100 RF Power Transistor -- MRF10005 RF Power Transistor -- MRF1000MB RF Power Transistor -- MRF10031 RF Power Transistor -- MRF1004MB RF Power Transistor -- MRF10120 RF Power Transistor -- MRF10150 RF Power Transistor -- MRF10350 RF Power Transistor -- MRF10502 RF Power Transistor -- MRF1090MB RF Power Transistor -- MRF1150MB RF Power Transistor -- MRF151 RF Power Transistor -- MRF16006 RF Power Transistor -- MRF313 RF Power Transistor -- MRF314 RF Power Transistor -- MRF316 RF Power Transistor -- MRF317 RF Power Transistor -- MRF321 RF Power Transistor -- MRF323 RF Power Transistor -- MRF327 RF Power Transistor -- MRF392 RF Power Transistor -- MRF393 RF Power Transistor -- MRF421 RF Power Transistor -- MRF422 RF Power Transistor -- MRF426 RF Power Transistor -- MRF428 RF Power Transistor -- MRF429 RF Power Transistor -- MRF448 RF Power Transistor -- MRF454 RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- MRFE6VP6300GSR5 RF Power Transistor -- MRFX1K80GNR5 RF Power Transistor -- MS1227D RF Power Transistor -- MS2248 RF Power Transistor -- MS2279 RF Small Signal Transistor Bipolar/HBT -- JAN2N2905A RF Small Signal Transistor Bipolar/HBT -- JANS2N2219A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2222A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2484 RF Small Signal Transistor Bipolar/HBT -- JANTX2N2907A RF Small Signal Transistor Bipolar/HBT -- JANTX2N2907AUB RF Small Signal Transistor Bipolar/HBT -- JANTX2N3440 RF Small Signal Transistor Bipolar/HBT -- JANTX2N3700 RF Small Signal Transistor Bipolar/HBT -- JANTX2N6988 RF Small Signal Transistor Bipolar/HBT -- JANTX2N7373 RF Small Signal Transistor Bipolar/HBT -- JANTXV2N6301 RF Small Signal Transistor Bipolar/HBT -- MRF587 RF Small Signal Transistor Silicon Carbide -- JAN2N1711 RF Small Signal Transistor Silicon Carbide -- JANTX2N3019S Silicon Carbide MOSFET Modules -- MSC080SMA120JS15 Silicon Carbide MOSFET Modules -- MSCASM120AM02CT6LINMG Silicon Carbide MOSFETs -- EPM3-1200-0017D-FY6 Silicon Carbide MOSFETs -- MSC011SMB120B4N Silicon Carbide MOSFETs -- MSC011SMB120SDT/R Silicon Carbide MOSFETs -- MSC011SMC120B4N Silicon Carbide MOSFETs -- MSC015SMA070B4N Silicon Carbide MOSFETs -- MSC017SMA120B4N Silicon Carbide MOSFETs -- MSC020SMB120SDT/R Silicon Carbide MOSFETs -- MSC025SMA120B4N Silicon Carbide MOSFETs -- MSC025SMA120SCT/R Silicon Carbide MOSFETs -- MSC025SMA330D/S Silicon Carbide MOSFETs -- MSC035SMA070B4N Silicon Carbide MOSFETs -- MSC035SMA070SCT/R Silicon Carbide MOSFETs -- MSC040SMA120SDT/R Silicon Carbide MOSFETs -- MSC060SMA070SDT/R Silicon Carbide MOSFETs -- MSC080SMA120SCT/R Silicon Carbide MOSFETs -- MSC080SMA120SDT/R Silicon Carbide MOSFETs -- MSC080SMA330B4N Silicon Carbide MOSFETs -- MSC080SMB120B4N Silicon Carbide MOSFETs -- MSC080SMB120SDT/R Silicon Carbide MOSFETs -- MSC090SMA070SCT/R Silicon Carbide MOSFETs -- MSC090SMA070SDT/R Silicon Carbide MOSFETs -- MSC180SMA120SDT/R Silicon Carbide MOSFETs -- MSC360SMA120SCT/R Silicon Carbide MOSFETs -- MSC360SMA120SDT/R Silicon Carbide/Silicon Hybrid Modules -- EXT-P955-A90_TC6	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon Carbide MOSFETs -- MSC040SMA120B	Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features...
Silicon Carbide MOSFETs -- E3M0060065D	Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide MOSFETs -- E3M0120090J Silicon Carbide MOSFETs -- E3M0120090J-TR	Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse...
Overvoltage Braking Transistor -- M3575T-H125 Overvoltage Braking Transistor -- M3575T-H15 Overvoltage Braking Transistor -- M3575T-H150 Overvoltage Braking Transistor -- M3575T-H200 Overvoltage Braking Transistor -- M3575T-H30 Overvoltage Braking Transistor -- M3575T-H300 Overvoltage Braking Transistor -- M3575T-H600 Overvoltage Braking Transistor -- M3575T-H75 Overvoltage Braking Transistor -- M3575T-L60 Overvoltage Braking Transistor -- M3675T-U10	Standard Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Dynamic Braking Transistor and Dynamic Braking Resistor Modules are used with AC drives to dissipate regenerated energy and eliminate overvoltage...
RF Power Transistor -- DC35GN-15-D3	The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
RF Power Transistor -- DC35GN-15-Q4	The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN...
RF Power Transistor -- DRF1200	The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1201	The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1203	The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1300	The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- DRF1301	The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Small Signal Transistor pHEMT -- EC2612-99F	The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminum gate features low resistance and...
RF Power Transistor -- GRF0020	The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. The wide bandwidth of the GRF0020 makes it suitable...
RF Power Transistor -- GRF0020D	The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable...
RF Power Transistor -- GRF0030	The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030 makes it suitable...
RF Power Transistor -- GRF0030D	The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable...
GaN Power Transistor -- GS-065-004-1-L-MR	The GS-065-004-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-008-1-L-MR GaN Power Transistor -- GS-065-008-1-L-TR	The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-011-1-L-E01-B	The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS-065-018-2-L-MR GaN Power Transistor -- GS-065-018-2-L-TR	The GS-065-018-2-L is a 650V, 18A, 78 mOhm bottom-side cooled transistor ideal for smaller and lighter consumer adapters for laptops and gaming consoles and higher power density and efficiency in...
GaN Power Transistor -- GS-065-060-5-B-A-MR GaN Power Transistor -- GS-065-060-5-B-A-TR	The GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to...
GaN Power Transistor -- GS-065-060-5-T-A-MR GaN Power Transistor -- GS-065-060-5-T-A-TR	The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates...
GaN Power Transistor -- GS-065-080-1-D-E01 GaN Power Transistor -- GS-065-080-1-D2-E01	The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
GaN Power Transistor -- GS-065-150-1-D-E01 GaN Power Transistor -- GS-065-150-1-D2-E01	The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
GaN Power Transistor -- GS66508P-MR	The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
RF Power Transistor -- MAGB-103340-015B0P	The MAGB-103340-015B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.3 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGB-103740-008B0P	The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGX-100027-002S0P	The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-002STP	The MAGX-100027-002S0P is a GaN on Si HEMTD-mode transistor suitable for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsto 2 W...
RF Power Transistor -- MAGX-100027-100CTP	The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-300CTP	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAPC-A1000-AD000 RF Power Transistor -- MAPC-A1000-ADTR1	The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25...
RF Power Transistor -- MAPC-A1103-ASTR1	The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with...
RF Power Transistor -- MAPC-A1500-ABTR1	The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1...
RF Power Transistor -- MHT1803A	The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
RF Power Transistor -- MMRF1050HR6	The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
RF Power Transistor -- MMRF5018HSR5	The MMRF5018HSR5 is a 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high...
RF Power Transistor -- MRF300AN RF Power Transistor -- MRF300BN	The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and...
RF Power Transistor -- MRFE6VP5600HR5	The MRFE6VP5600HR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HR6	The MRFE6VP5600HR6 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HSR5	The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP6300HR5	The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFX035HR5	The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from...
RF Power Transistor -- MRFX1K80HR5	The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- MRFX1K80NR5	The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease...
Power IGBT Transistor -- MSCGLQ25X120CRTBL3NG	The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses...
Power IGBT Transistor -- MSCGLQ40X120CTYZBNMG	The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. Features Silicon Carbide (SiC) schottky diode IGBT4 Low stray inductance Lead frames for power connections Si3N4...
Silicon Carbide MOSFETs -- MSC060SMA070SA Silicon Carbide MOSFETs -- MSC750SMA170SA	The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
Silicon Carbide MOSFETs -- MSC015SMA070B4 Silicon Carbide MOSFETs -- MSC025SMA120B4 Silicon Carbide MOSFETs -- MSC035SMA070B4 Silicon Carbide MOSFETs -- MSC035SMA070S Silicon Carbide MOSFETs -- MSC040SMA120B4 Silicon Carbide MOSFETs -- MSC060SMA070B4 Silicon Carbide MOSFETs -- MSC080SMA120B4 Silicon Carbide MOSFETs -- MSC080SMA120J Silicon Carbide MOSFETs -- MSC750SMA170B Silicon Carbide MOSFETs -- MSC750SMA170B4	The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
RF Power Transistor -- MRFE6VP61K25GSR5	These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input...
RF Power Transistor -- MMRF5014HR5	This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- MRF24G300HSR5	This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MRF8VP13350GNR3	This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW...
RF Power Transistor -- MRF13750HR5 RF Power Transistor -- MRF13750HSR5	This 750 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of CW or pulse...
RF Power Transistor -- MRF101AN RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE8VP8600HR5 RF Power Transistor -- MRFE8VP8600HSR5	This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use...
RF Power Transistor -- MMRF1320GNR1	This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows...
RF Power Transistor -- MRFE6VP61K25HR6 RF Power Transistor -- MRFE6VP61K25HSR5	This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFX600GSR5 RF Power Transistor -- MRFX600HR5	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3 RF Power Transistor -- MRFE6VP6600NR3	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRF1K50HR5	This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications.
RF Power Transistor -- MMRF1308HR5	This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
RF Power Transistor -- MMRF1310HR5 RF Power Transistor -- MMRF1310HSR5	This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
RF Power Transistor -- MRF1K50GNR5	This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MRF1K50NR5	This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MMRF1314GSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- MRF6V12500GSR5	This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.

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