Microchip Technology, Inc. MOSFETs MSC025SMA120B4

MOSFET SIC 1200 V 25 mOhm TO-247-4

MOSFET SIC 1200 V 25 mOhm TO-247-4

MOSFET SIC 1200 V 25 mOhm TO-247-4

TRANS SJT N-CH 1200V 103A TO247 Product overview: MSC025SMA120B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 103A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 103A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC025SMA120B4 can be used for catalog matching and distributor lookup.

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T_J(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS Compliant

Benefits

• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Win Source Part Number: 1094063-MSC025SMA120B4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Other Names: 150-MSC025SMA120B4
Base Product Number: MSC025
Drive Voltage (Max Rds On, Min Rds On): 20V