Microchip Technology, Inc. MOSFETs MSC025SMA120B4

MOSFET SIC 1200 V 25 mOhm TO-247-4

MOSFET SIC 1200 V 25 mOhm TO-247-4

MOSFET SIC 1200 V 25 mOhm TO-247-4

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T_J(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS Compliant

Benefits

• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution

TRANS SJT N-CH 1200V 103A TO247 Product overview: MSC025SMA120B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 103A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 103A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC025SMA120B4 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1094063-MSC025SMA120B4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Other Names: 150-MSC025SMA120B4
Base Product Number: MSC025
Drive Voltage (Max Rds On, Min Rds On): 20V