Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSC100SM70JCU2

Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications Power factor correction AC and DC motor control Switched mode power supplies Brake switch
  • Silicon Carbide MOSFET Modules - MSC100SM70JCU2 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC100SM70JCU2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications Power factor correction AC and DC motor control Switched mode power supplies Brake switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSC100SM70JCU2 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSC100SM70JCU2
Silicon Carbide MOSFET Modules MSC100SM70JCU2
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Stable temperature behavior Low junction-to-case thermal resistance RoHS compliant Applications Power factor correction AC and DC motor control Switched mode power supplies Brake switch

Features

  • SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance

Benefits

  • Outstanding performance at high frequency operation
  • High efficiency converter
  • Direct mounting to heatsink (isolated package)
  • Stable temperature behavior
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Power factor correction
  • AC and DC motor control
  • Switched mode power supplies
  • Brake switch
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC100SM70JCU2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC100SM70JCU2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC100SM70JCU2
SICFET N-CH 700V 124A SOT227

SICFET N-CH 700V 124A SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC100SM70JCU2 MSC100SM70JCU2
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-227 SOT-227-4, miniBLOC
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