The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAPC-A1103-ASTR1 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
