MACOM RF Power Transistor MAPC-A1103-ASTR1

Description
The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.
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Description
The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.
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Downers Grove, IL, United States
RF Power Transistor
MAPC-A1103-ASTR1
RF Power Transistor MAPC-A1103-ASTR1
The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.

The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAPC-A1103-ASTR1
Product Name RF Power Transistor
Transistor Technology / Material GaN
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