The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation, supporting both CW and pulsed modes with a minimum output power of 270 W (54.3 dBm) in an air cavity ceramic package. The device operates at 28 V or 50 V drain supply voltage, features internal pre-matching, and requires a flange connection to RF, DC, and thermal ground. It meets RoHS compliance and is rated for a case operating temperature range of -40°C to +85°C. The MAPC-A1103-ASTR1 variant is supplied in tape and reel packaging.
The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAPC-A1103-ASTR1 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
