Microchip Technology, Inc. Silicon Carbide MOSFETs MSC080SMA120B

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
  • Single FETs, MOSFETs - MSC080SMA120B - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - MSC080SMA120B-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip - 29AK2560 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC080SMA120B
Silicon Carbide MOSFETs MSC080SMA120B
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - MSC080SMA120B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSC080SMA120B
Single FETs, MOSFETs MSC080SMA120B
SICFET N-CH 1200V 37A TO247-3

SICFET N-CH 1200V 37A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - MSC080SMA120B-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MSC080SMA120B-ND
Single FETs, MOSFETs MSC080SMA120B-ND
N-Channel 1200V 37A (Tc) 200W (Tc) Through Hole TO-247-3

N-Channel 1200V 37A (Tc) 200W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC080SMA120B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC080SMA120B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC080SMA120B
SICFET N-CH 1200V 37A TO247-3

SICFET N-CH 1200V 37A TO247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip - 29AK2560 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip
29AK2560
Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip 29AK2560
MOSFET, N-CH, 1.2KV, 37A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 37A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC080SMA120B MSC080SMA120B MSC080SMA120B-ND MSC080SMA120B 29AK2560
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant Microchip
rDS(on) 0.0800 ohms
Package Type TO-247; TO-247-3L TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
Unlock Full Specs
to access all available technical data