Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCMC120AM02CT6LIAG

Description
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS compliant Application Motor control
  • Silicon Carbide MOSFET Modules - MSCMC120AM02CT6LIAG - Richardson RFPD
    Richardson RFPD
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Description
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS compliant Application Motor control
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCMC120AM02CT6LIAG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCMC120AM02CT6LIAG
Silicon Carbide MOSFET Modules MSCMC120AM02CT6LIAG
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS compliant Application Motor control

Features

  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • M4 and M5 power connectors
  • M2.5 signals connectors
  • AlN substrate for improved thermal performance

SiC Power MOSFET

  • Low RDS(on)
  • High temperature performance

SiC Schottky Diode

  • Zero reverse recovery
  • Zero forward recovery
  • Temperature independent switching behavior
  • Positive temperature coefficient on VF

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile
  • RoHS compliant

Application

  • Motor control
Supplier's Site
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCMC120AM02CT6LIAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCMC120AM02CT6LIAG
SIC 2N-CH 1200V 742A SP6C LI

SIC 2N-CH 1200V 742A SP6C LI

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCMC120AM02CT6LIAG MSCMC120AM02CT6LIAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6
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