Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 0.45-6.0 GHz Low Noise Transistor | |
| 2-pack-integrated intelligent Power System | |
| 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench technology IGBT|•CAL High Density FWD|•Integrated NTC... | |
| 3-Phase Bridge Rectifier + Brake Chopper + 3-Phase Bridge Inverter|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology free-wheeling diode|•Integrated NTC temperature... | |
| 3-Phase Bridge Rectifier + Brake Chopper|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL Technology FWD|Typical Applications:|•Recti fier | |
| 3-Phase Bridge Rectifier + IGBT braking chopper | |
| A208 version includes the brake and is housed in the 12mm flow 1 package. Trench Fieldstop technology IGBTs for low saturation losses. Compact design with enhanced rectifier. | |
| Controllable Bridge Rectifier | |
| Fast IGBT4 Module | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro... | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•DC/DC - converter|•Brake... | |
| Fast Switching H Bridge Module. fastPIM 1 H. | |
| Features 1200V SiC Planar MOSFET Single phase inverter topology One screw mounting module Fully compatible with other SEMITOP® Press-Fit types Improved thermal performance by aluminum oxide substrate Ultra Low... | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductance Layout 1200V IGBT and 1200V SiC diode PressFiT option Applications solar inverter | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET (Cree) and 1200V SiC diode (Cree) Target Applications Solar inverter | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET and 1200V SiC diode Integrated bypass diode Target Applications Solar Inverter UPS | |
| Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding | |
| Features IGBT4 = 4. Generation (Trench) IGBT VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x ICNOM Soft switching 4. Generation CAL diode (CAL4)... | |
| Features Solderless interconnection Mitsubishi Generation 6.1 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Solderless interconnection Trench Fieldstop IGBT4 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High Short Circuit capability, self limiting to 6 x IC Applications AC Inverter Drives UPS Electronic Welders | |
| Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders | |
| flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC... | |
| flowPIM 1 3rd gen, 1200V/25A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour. Applications:... | |
| H-bridge inverter. Features • Trench IGBTs • Robust and soft freewheeling diode in CAL technology • Highly reliable spring contacts for electrical connection • UL recognised file no. E63532. Typical... | |
| H-bridge inverter | |
| IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Ultra Fast NPT IGBT technology|•Vce,sat with positive coefficient|Typical Applications:|•Switc hing (not for... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|•Fast... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel, homogeneous Silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor... | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|Typical Applications:|•3 Level Inverter|•UPS | |
| IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Ultrafast NPT technology IGBT|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter | |
| IGBT Module|•MOS input (voltage controlled)|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse... | |
| IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 42 kVA|•Typ. motor power... | |
| IGBT Module|•One screw mounting module|•Fully compatible with SEMITOP®1,2,3|•Impro ved thermal performances by aluminum oxide substrate|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 50 kVA|•Typ. motor power... | |
| IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H igh short circuit capability,... | |
| Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6... | |
| MiniSKiip 2nd Gen. PIM Size 3, 1200V / 50A. | |
| MiniSKiip 2nd Gen. SIXPACK Size 2, 1200V / 50A. | |
| MiniSKiiP® 3 Features Trench 4 IGBT´s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections Typical Applications Inverter up to 41 kVA Typical motor... | |
| MiniSKiiP® IGBT4 PACK Module | |
| MOSFET Module Features Compact Design One screw mounting Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB) Trench Technology Short internal connections and low inductance case Typical... | |
| Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage distances (13mm)|•UL recognized, file... | |
| Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy... | |
| Powerex has expanded the HVIGBT module product line with the development of the QID3320004 3300V 200A Dual IGBT low profile module. This module makes use of the latest Mitsubishi R-Series... | |
| Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of... | |
| Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SEMITOP® 3 IGBT Module Features Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL Technology FWD Integrated... | |
| Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20... | |
| SEMITRANS® 2. Trench IGBT Modules Features Homogenous Si Trench=Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting ti 6 x Ic Typical Applications AC inverter drives... | |
| SEMITRANS® 3 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 3 Features V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) Increased power cycling capability... | |
| SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 4, IGBT4 Modules | |
| SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items... | |
| SEMiX® offers users a high degree of flexibility in system configuration. Inverters, for instance, can be constructed either with compact sixpacks (SEMiX® 13/33c) or with thermally decoupled half bridges in... | |
| Six Pack with NTC. flowPACK 1. | |
| Sixpack with NTC. flowPACK 0. | |
| SKiiP® 3 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3. 2-pack-integrated intelligent Power System Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction... | |
| SKiiP® 3 Features SKiiP technology inside Trench IGBTs CAL HD diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink Typical Applications Renewable energies Traction Elevators Industrial drives Items... | |
| SKiiP® 4. 2-pack-integrated intelligent Power System Features Intelligent Power Module Integrated current and temperature measurement Integrated DC-link measurement Solder free power section IGBT4 and CAL4F technology Safety isolated switching and... | |
| Split Dual Si/SiC Hybrid IGBT Module. Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft... | |
| SPT IGBT Module|•Homogeneous Si|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders fsw up to 20 kHz... | |
| SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz... | |
| Standard Power Integrated Module with PFC. flowPIM 1 + P. | |
| Standard Power Integrated Module. flowPIM 0. | |
| Standard Power Integrated Module. flowPIM 1, 2nd Generation. | |
| Standard Power Integrated Module. flowPIM 1. | |
| Standard Power Integrated Module. flowPIM 2. | |
| Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn... | |
| Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT- Non Punch-Through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. | |
| The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input... | |
| The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and... | |
| The TA9310E is a broadband GaN power transistor capable of delivering 20W CW from 500MHz to 4.0GHz frequency band. The transistor can be used at lower frequencies with reduced output... | |
| The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and... | |
| Three phase controlled rectifier Features Isolated power stacks SKKT 162/16 Heatsink P3/265 Forced air cooling RC circuit included Thermal trip included Typical Applications Regulated power supplies Alternator excitation Motor control... | |
| Transfer Molding Type Insulated Type Main Function and Ratings RC-IGBT inverter bridge for three phase DC-to-AC power conversion Built-in bootstrap diodes with current limiting resistor Open emitter type Application AC... | |
| Trench IGBT Module (in Half-Bridge configuration). | |
| Trench IGBT Module | |
| Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper... | |
| Trench IGBT Modules. SEMiX353GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • AC inverter... | |
| Trench IGBT Modules | |
| Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability|•UL recognized file no. E63532|Typical Applications:|•AC inverter drives|•UPS|•Electro nic Welding | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matri x Converter|•Resonant Inverter|•Current Source Inverter | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS | |
| Ultra Fast IGBT Module|•Homogeneous Si|•NPT-IGBT|•Vce(sa t) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Reson ant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw... | |
| Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB... | |
| Vincotech releases Press-fit versions flowPIM® 0 and flowPIM® 1 product families. All modules feature a 3-phase input rectifier, a 3-phase output inverter, a brake chopper, and an added... |
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