MACOM RF Power Transistor MAGB-103740-008B0P

Description
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.
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Description
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.
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Suppliers

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Downers Grove, IL, United States
RF Power Transistor
MAGB-103740-008B0P
RF Power Transistor MAGB-103740-008B0P
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.

The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAGB-103740-008B0P
Product Name RF Power Transistor
Transistor Technology / Material GaN
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