MACOM RF Power Transistor MAGB-103740-008B0P

Description
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.
Request a Quote
Description
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
RF Power Transistor
MAGB-103740-008B0P
RF Power Transistor MAGB-103740-008B0P
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.

The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output levelsto 8 W (39 dBm) in a 4x4mm DFN package.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAGB-103740-008B0P
Product Name RF Power Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2682-AZ - 855146-2SC2682-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-10 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 19.8 dB
View Details
4 suppliers