Microchip Technology, Inc. Silicon Carbide MOSFETs MSC060SMA070SCT/R

Description
700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
  • Silicon Carbide MOSFETs - MSC060SMA070SCT/R - Richardson RFPD
    Richardson RFPD
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Description
700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote
Datasheet
Datasheet Summary
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700V, 60 mΩ typical at VGS = 20V, Silicon Carbide (SiC) N-Channel MOSFET in a PSMT-16L surface mount package with top-side cooling and source sense, rated for a maximum junction temperature of 175 °C, with a continuous drain current of 48 A at 25 °C, and able to withstand a single-pulse avalanche energy of up to 1100 mJ. The device is RoHS compliant and features low gate charge, fast switching, and an integrated body diode that eliminates the need for an external freewheeling diode.

Datasheet Summary
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700V, 60 mΩ typical at VGS = 20V, Silicon Carbide (SiC) N-Channel MOSFET in a PSMT-16L surface mount package with top-side cooling and source sense, rated for a maximum junction temperature of 175 °C, with a continuous drain current of 48 A at 25 °C, and able to withstand a single-pulse avalanche energy of up to 1100 mJ. The device is RoHS compliant and features low gate charge, fast switching, and an integrated body diode that eliminates the need for an external freewheeling diode.

Suppliers

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Silicon Carbide MOSFETs - MSC060SMA070SCT/R - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC060SMA070SCT/R
Silicon Carbide MOSFETs MSC060SMA070SCT/R
700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution

700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source sense.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC060SMA070SCT/R
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0600 ohms
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