The GRF0020D is a 30 W (P3dB) unmatched GaN-on-SiC HEMT bare die operating from DC to 7 GHz with a 50 V drain supply voltage. The die measures 1.265 x 0.755 mm and is intended for pulsed and linear applications in cellular infrastructure, radar, communications, and test instrumentation. It is rated for a maximum junction temperature of 225 °C and operates with a package base temperature range of -40 to 105 °C. The device is RoHS compliant and requires ESD precautions during handling.
The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GRF0020D |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
