Guerrilla RF RF Power Transistor GRF0020D

Description
The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
  • RF Power Transistor - GRF0020D - Richardson RFPD
    Richardson RFPD
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Description
The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
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Suppliers

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RF Power Transistor - GRF0020D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
GRF0020D
RF Power Transistor GRF0020D
The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number GRF0020D
Product Name RF Power Transistor
Transistor Technology / Material GaN
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