Microchip Technology, Inc. Silicon Carbide MOSFETs MSC025SMA330B4

Description
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC025SMA330B4 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant
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Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC025SMA330B4
Silicon Carbide MOSFETs MSC025SMA330B4
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant

3300V Silicon Carbide (SiC) MOSFET

MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gage resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC025SMA330B4 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC025SMA330B4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC025SMA330B4
MOSFET SIC 3300 V 25 MOHM TO-247

MOSFET SIC 3300 V 25 MOHM TO-247

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC025SMA330B4 MSC025SMA330B4
Product Name Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0250 ohms
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