Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM042CD3AG

Features

• SiC Power MOSFET
• Low RDS(on)
• High temperature performance
• Silicon carbide (SiC) Schottky diode
• Zero reverse recovery
• Zero forward recovery
• Temperature-independent switching behavior
• Positive temperature coefficient on VF
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
• Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

• High efficiency converters
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS compliant

Applications

• Uninterruptible Power Supply (UPS)
• EV motor and traction drive
• Welding converters
• Switched mode power supplies

Manufacturer: Microchip Technology
Win Source Part Number: 1324629-MSCSM120AM042CD3AG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Box
Standard Package: 1
Mounting: Chassis Mount
FET Type: 2 N Channel (Phase Leg)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Power - Max: 2.031kW (Tc)
Supplier Device Package: D3
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: Module
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 150-MSCSM120AM042CD3AG
Base Product Number: MSCSM120
RoHS Status: ROHS3 Compliant

Mosfet Array 2 N Channel (Phase Leg) 1200V (1.2kV) 495A (Tc) 2.031kW (Tc) Chassis Mount D3