Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name	Notes
Silicon Carbide MOSFET Modules -- CAS300M12BM2 Silicon Carbide MOSFET Modules -- CAS300M12BM2T	1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation...
Silicon Carbide MOSFET Modules -- CCS020M12CM2	1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device...
Silicon Carbide MOSFET Modules -- CAS300M17BM2	1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease...
Silicon Carbide MOSFET Modules -- CAS175M12BM3 Silicon Carbide MOSFET Modules -- CAS175M12BM3T	1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
Silicon Carbide MOSFET Modules -- CAS350M12BM3 Silicon Carbide MOSFET Modules -- CAS350M12BM3T	1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
Silicon Carbide MOSFET Modules -- CAS480M12HM3 Silicon Carbide MOSFET Modules -- CAS480M12HM3T	1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
Silicon Carbide MOSFET Modules -- CAS530M12BM3 Silicon Carbide MOSFET Modules -- CAS530M12BM3T	1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
Silicon Carbide MOSFET Modules -- CAB760M12HM3 Silicon Carbide MOSFET Modules -- CAB760M12HM3T	1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
Silicon Carbide MOSFETs -- C2M0025120D	2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche...
Silicon Carbide MOSFET Modules -- CAB011A12GM3 Silicon Carbide MOSFET Modules -- CAB011A12GM3T	1200 V, 11 mOhm, Silicon Carbide, Half-Bridge Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminum Nitride Ceramic Substrate Optional...
Silicon Carbide MOSFET Modules -- CCB016M12GM3 Silicon Carbide MOSFET Modules -- CCB016M12GM3T	1200 V, 16 mOhm, Silicon Carbide, Six-Pack Module Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Optional Pre-Applied Thermal Interface Material...
Silicon Carbide MOSFET Modules -- CAB760M12HM3R Silicon Carbide MOSFET Modules -- CAB760M12HM3RT	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the...
Silicon Carbide MOSFETs -- C3M0030170D	Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits...
Silicon Carbide MOSFETs -- C3M0030170K Silicon Carbide MOSFETs -- C3M0030170P	Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with...
Silicon Carbide MOSFET Modules -- CAB320M17XM3	Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator and Copper Baseplate 1700V...
Silicon Carbide MOSFET Modules -- CAS310M17BM3 Silicon Carbide MOSFET Modules -- CAS310M17BM3T	Features Industry Standard 62mm Footprint Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum...
Silicon Carbide MOSFET Modules -- CBB021M12FM3 Silicon Carbide MOSFET Modules -- CBB021M12FM3T Silicon Carbide MOSFET Modules -- CBB032M12FM3 Silicon Carbide MOSFET Modules -- CBB032M12FM3T	Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction...
Silicon Carbide MOSFETs -- C3M0040120K-M	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0075120D Silicon Carbide MOSFETs -- C3M0075120D-A	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low...
Silicon Carbide MOSFETs -- C3M0075120J Silicon Carbide MOSFETs -- C3M0075120J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0120100J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide MOSFETs -- C3M0075120K Silicon Carbide MOSFETs -- C3M0075120K-A	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0021120J2-TR Silicon Carbide MOSFETs -- C3M0032120J2-TR Silicon Carbide MOSFETs -- C3M0040120J2-TR Silicon Carbide MOSFETs -- C3M0075120J2-TR	Silicon Carbide Power MOSFET Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin Larger drain tab for better thermal performance High blocking voltage with low on-resistance...
Silicon Carbide MOSFETs -- C3M0016120K1 Silicon Carbide MOSFETs -- C3M0021120K1 Silicon Carbide MOSFETs -- C3M0025075K1 Silicon Carbide MOSFETs -- C3M0032120K1 Silicon Carbide MOSFETs -- C3M0040120K1 Silicon Carbide MOSFETs -- C3M0045075K1 Silicon Carbide MOSFETs -- C3M0060075K1 Silicon Carbide MOSFETs -- C3M0075120K1 Silicon Carbide MOSFETs -- C3M0160120K1	Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Optimized package with separate driver source pin Lower profile TO-247-4 package body High blocking voltage with low on-resistance High speed switching with...
Silicon Carbide MOSFETs -- C3M0025065L-TR Silicon Carbide MOSFETs -- C3M0045065L Silicon Carbide MOSFETs -- C3M0045065L-TR Silicon Carbide MOSFETs -- C3M0060065L Silicon Carbide MOSFETs -- C3M0060065L-TR Silicon Carbide MOSFETs -- C3M0120065L Silicon Carbide MOSFETs -- C3M0120065L-TR	Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide MOSFETs -- C3M0900170M	Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible...
Silicon Carbide MOSFETs -- C3M0900170D Silicon Carbide MOSFETs -- C3M0900170J Silicon Carbide MOSFETs -- C3M0900170J-TR	Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low On-resistance High speed switching with low capacitances 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate...
Silicon Carbide MOSFET Modules -- CAB525F12XM3	Silicon Carbide, Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low-Inductance (6.7 nH) Design Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator...
Silicon Carbide MOSFET Modules -- CAB3R5M12DM4	Silicon Carbide, Half-Bridge Module Technical Features Ultra-Low Loss High Frequency Operation Light Weight AlSiC Baseplate Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Typical Applications e-Mobility and Motor...
Silicon Carbide MOSFET Modules -- CAB600M33LM3	Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V...
Silicon Carbide MOSFET Modules -- CAB003M09DM3	Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride...
Silicon Carbide MOSFET Modules -- CAB5R0A23GM4 Silicon Carbide MOSFET Modules -- CAB6R0A23GM4 Silicon Carbide MOSFET Modules -- CAB7R5A23GM4	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters...
Silicon Carbide MOSFET Modules -- CAB5R0A23GM4T Silicon Carbide MOSFET Modules -- CAB6R0A23GM4T Silicon Carbide MOSFET Modules -- CAB7R5A23GM4T	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy...
Silicon Carbide MOSFET Modules -- CAB004M12GM4 Silicon Carbide MOSFET Modules -- CBB011M12GM4	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters...
Silicon Carbide MOSFET Modules -- CAB004M12GM4T Silicon Carbide MOSFET Modules -- CBB011M12GM4T	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications...
RF Power Transistor -- CGH40045P	A high power RF Amplifier module with this device is available: 1203/BBM3K5ANQ 1208/BBM3K5OKO 1117/BBM3K5KEL 1119/BBM3K5KHM 1164/BBM3Q6AHM
Silicon Carbide MOSFET Modules -- APTMC120HR11CT3AG Silicon Carbide MOSFET Modules -- APTMC120HRM40CT3AG	Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail...
Silicon Carbide MOSFET Modules -- APTMC60TL11CT3AG Silicon Carbide MOSFET Modules -- APTMC60TLM14CAG Silicon Carbide MOSFET Modules -- APTMC60TLM55CT3AG	Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient...
Silicon Carbide MOSFET Modules -- APTMC120TAM34CT3AG Silicon Carbide MOSFET Modules -- APTMC170AM30CT1AG Silicon Carbide MOSFET Modules -- APTMC170AM60CT1AG	Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse...
Silicon Carbide MOSFET Modules -- APTMC120HM17CT3AG	Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward...
Silicon Carbide MOSFETs -- C2M1000170D	C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and...
Silicon Carbide MOSFETs -- C2M0040120D	CC2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)...
RF Power Transistor -- CG2H30070F	CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CG2H40010F	CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40010P	CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40025F	CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40025P	CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40035F RF Power Transistor -- CG2H40035P	CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40045F	CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40045P	CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40120F RF Power Transistor -- CG2H40120P	CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H80015D-GP4	CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80030D-GP4	CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher...
RF Power Transistor -- CG2H80045D-GP4	CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80060D-GP4	CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80120D-GP4	CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH09120F	CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA...
RF Power Transistor -- CGH21120F	CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz...
RF Power Transistor -- CGH21240F	CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA...
RF Power Transistor -- CGH25120F	CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
RF Power Transistor -- CGH27015F	CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G,...
RF Power Transistor -- CGH27015P	CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,...
RF Power Transistor -- CGH27030F	CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,...
RF Power Transistor -- CGH27030P	CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms,...
RF Power Transistor -- CGH27060F	CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms,...
RF Power Transistor -- CGH31240F	CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band...
RF Power Transistor -- CGH35060F2	CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 ideal for 3.1-3.5 GHz...
RF Power Transistor -- CGH35060P2	CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz...
RF Power Transistor -- CGH35240F	CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band...
RF Power Transistor -- CGH40006P	CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40006S	CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40010F	CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40010P	CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40025F	CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40025P	CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40035F	CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40045F	CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40090PP	CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40120F	CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40120P	CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40180PP	CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH55015F2	CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed...
RF Power Transistor -- CGH55030P2	CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed...
RF Power Transistor -- CGH60008D-GP4	CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60015D-GP4	CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60030D-GP4	CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60060D-GP4	CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60120D-GP4	CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV14250F	CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 -...
RF Power Transistor -- CGHV14250P	CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 -...
RF Power Transistor -- CGHV14500F	CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 -...
RF Power Transistor -- CGHV14500P	CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500P ideal for 1.2 -...
RF Power Transistor -- CGHV14800F	CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 -...
RF Power Transistor -- CGHV1F006S	CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV1F025S	CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV1J006D-GP4	CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV1J025D-GP4	CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV1J070D-GP4	CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV27015S	CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
RF Power Transistor -- CGHV27060MP	CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no...
RF Power Transistor -- CGHV31500F	CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -...
RF Power Transistor -- CGHV31500F1	CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device...
RF Power Transistor -- CGHV35060MP	CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz...
RF Power Transistor -- CGHV35120F	CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1 -...
RF Power Transistor -- CGHV35150F	CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 -...
RF Power Transistor -- CGHV35150P	CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 -...
RF Power Transistor -- CGHV35400F	CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 -...
RF Power Transistor -- CGHV35400F1	CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device...
RF Power Transistor -- CGHV37400F	CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 -...
RF Power Transistor -- CGHV38375F	CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band radar...
RF Power Transistor -- CGHV40030F	CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV40030P	CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV40050F	CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40050P	CGHV40050P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
Silicon Carbide MOSFETs -- C3M0021120K	Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with...
Silicon Carbide MOSFETs -- C2M0045170D	Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System...
Silicon Carbide MOSFETs -- C2M1000170J-TR	Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compliant Benefits...
Power IGBT Transistor -- APTGX900A120TDP3EG Power IGBT Transistor -- APTGX900A170TDP3EG	Features IGBT 7: Low-voltage drop, Low-leakage current Kelvin emitter for easy drive M6 power connectors Internal thermistor for temperature monitoring Al2O3 substrate and copper base plate Press-fit terminals for easy...
Power IGBT Transistor -- APTGX75H170T3G	Features IGBT 7 Low-voltage drop Low-leakage current Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring Al2O3 substrate and copper base plate Benefits Direct mounting...
Power IGBT Transistor -- APTGX75TA170TPG	Features IGBT 7 Low-voltage drop Low-leakage current Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring Al2O3 substrate and copper base plate Benefits High efficiency...
Power IGBT Transistor -- APTGX75DU170T3AG	Features IGBT 7 Low-voltage drop Low-leakage current Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Copper base plate...
Power IGBT Transistor -- APTGX800U120D4G Power IGBT Transistor -- APTGX900U170D4G	Features IGBT 7 Low-voltage drop Low-leakage current Very low stray inductance Kelvin emitter for easy drive M6 power connectors M4 connectors for signal Al2O3 substrate and copper base plate Benefits...
Silicon Carbide MOSFETs -- C4MS025120J2-TR Silicon Carbide MOSFETs -- C4MS025120K Silicon Carbide MOSFETs -- C4MS025120K1 Silicon Carbide MOSFETs -- C4MS025120U2-TR Silicon Carbide MOSFETs -- C4MS036120J2-TR Silicon Carbide MOSFETs -- C4MS036120K Silicon Carbide MOSFETs -- C4MS036120K1 Silicon Carbide MOSFETs -- C4MS036120U2-TR Silicon Carbide MOSFETs -- C4MS047120J2-TR Silicon Carbide MOSFETs -- C4MS047120K Silicon Carbide MOSFETs -- C4MS047120K1 Silicon Carbide MOSFETs -- C4MS047120U2-TR Silicon Carbide MOSFETs -- C4MS065120J2-TR Silicon Carbide MOSFETs -- C4MS065120K Silicon Carbide MOSFETs -- C4MS065120K1 Silicon Carbide MOSFETs -- C4MS065120U2-TR	Features Industry compatible drive voltage 15V...18V/-5V...0V Soft body diode with low Vds overshoot and ringing Low Rds(on) at high operating temperatures Improved device capacitances ratio (Ciss/Crss) High transient voltage robustness...
Silicon Carbide MOSFET Modules -- CAB530M12BM3 Silicon Carbide MOSFET Modules -- CAB530M12BM3T	Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance...
Silicon Carbide/Silicon Hybrid Modules -- APTM100A13SCG Silicon Carbide/Silicon Hybrid Modules -- APTM100TA35SCTPG Silicon Carbide/Silicon Hybrid Modules -- APTM100UM65SCAVG Silicon Carbide/Silicon Hybrid Modules -- APTM120U10SCAVG	Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery,...
Silicon Carbide/Silicon Hybrid Modules -- APTM100H45SCTG Silicon Carbide/Silicon Hybrid Modules -- APTM50AM38SCTG Silicon Carbide/Silicon Hybrid Modules -- APTM50HM75SCTG	Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Silicon Carbide/Silicon Hybrid Modules -- APTM120DA30CT1G	Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature...
Silicon Carbide/Silicon Hybrid Modules -- APTM50AM24SCG	Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Silicon Carbide MOSFET Modules -- CAB006A12GM3 Silicon Carbide MOSFET Modules -- CAB006A12GM3T Silicon Carbide MOSFET Modules -- CAB006M12GM3 Silicon Carbide MOSFET Modules -- CAB006M12GM3T Silicon Carbide MOSFET Modules -- CAB008A12GM3 Silicon Carbide MOSFET Modules -- CAB008A12GM3T Silicon Carbide MOSFET Modules -- CAB008M12GM3 Silicon Carbide MOSFET Modules -- CAB008M12GM3T	Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /...
Power MOSFET Transistor -- APTM50H15FT1G	Full - Bridge MOSFET Power Module
Power MOSFET Transistor -- APTML100U60R020T1AG	Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High...
Silicon Carbide MOSFET Modules -- ASDAK-MSCSM120AM042CT6LIAG-01	Microchip’s Accelerated Silicon Carbide (SiC) Development Kit includes the hardware and software elements required to rapidly optimize the performance of the Microchip family of SP6LI Low Inductance SiC modules and...
Silicon Carbide MOSFET Modules -- APTMC120AM20CT1AG	Microsemi manufacturer’s part number: APTMC120AM20CT1AG Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode...
Power IGBT Transistor -- APTLGT400A608G	Phase leg intelligent power module
Power FREDFET Transistor -- APTM20AM05FG Silicon Carbide MOSFET Modules -- APTMC120AM08CD3AG	Phase leg MOSFET Power Module
Silicon Carbide MOSFET Modules -- APTMC120AM09CT3AG Silicon Carbide MOSFET Modules -- APTMC120AM12CT3AG Silicon Carbide MOSFET Modules -- APTMC120AM16CD3AG Silicon Carbide MOSFET Modules -- APTMC120AM25CT3AG Silicon Carbide MOSFET Modules -- APTMC120AM55CT1AG	Phase leg SiC MOSFET Power Module
RF Power Transistor -- ARF477FL	RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
Power FREDFET Transistor -- APTM100AM90FG Power FREDFET Transistor -- APTM100H18FG Power FREDFET Transistor -- APTM100UM45FAG Power FREDFET Transistor -- APTM10AM02FG Power FREDFET Transistor -- APTM10HM05FG Power FREDFET Transistor -- APTM10UM01FAG Power FREDFET Transistor -- APTM10UM02FAG Power FREDFET Transistor -- APTM120A15FG Power FREDFET Transistor -- APTM120UM70FAG Power FREDFET Transistor -- APTM20AM04FG Power FREDFET Transistor -- APTM20HM08FG Power FREDFET Transistor -- APTM20HM10FG Power FREDFET Transistor -- APTM20UM03FAG Power FREDFET Transistor -- APTM50AM17FAG Power FREDFET Transistor -- APTM50AM17FG Power FREDFET Transistor -- APTM50H14FT3G Power FREDFET Transistor -- APTM50HM38FG Power FREDFET Transistor -- APTM50HM65FT3G Power MOSFET Transistor -- APTM08TAM04PG Power MOSFET Transistor -- APTM100A13DG Power MOSFET Transistor -- APTM100A13SG Power MOSFET Transistor -- APTM100UM45DAG Power MOSFET Transistor -- APTM100UM60FAG Power MOSFET Transistor -- APTM100UM65SAG Power MOSFET Transistor -- APTM10AU70D3AG Power MOSFET Transistor -- APTM10DAM02G Power MOSFET Transistor -- APTM10DUM02G Power MOSFET Transistor -- APTM10SKM02G Power MOSFET Transistor -- APTM10SKM05TG Power MOSFET Transistor -- APTM120A20SG Power MOSFET Transistor -- APTM120DU15G Power MOSFET Transistor -- APTM120UM70DAG Power MOSFET Transistor -- APTM20AM06SG Power MOSFET Transistor -- APTM20HM20STG Power MOSFET Transistor -- APTM20SKM04G Power MOSFET Transistor -- APTM50AM24SG Power MOSFET Transistor -- APTM50HM75STG Power MOSFET Transistor -- APTMC120DUM12AG RF Power Transistor -- ARF449BG RF Power Transistor -- ARF468AG RF Power Transistor -- ARF468BG RF Power Transistor -- ARF469AG RF Power Transistor -- ARF469BG RF Power Transistor -- ART150PEGXY RF Power Transistor -- ART150PEGZ RF Power Transistor -- ART1K6FHGJ RF Power Transistor -- ART1K6FHSU RF Power Transistor -- ART1K6FHU RF Power Transistor -- ART1K6PHGY RF Power Transistor -- ART1K6PHY RF Power Transistor -- ART2K0FESU RF Power Transistor -- ART2K0FEU RF Power Transistor -- ART2K0PEY RF Power Transistor -- ART2K0TFEJ RF Power Transistor -- ART2K5TFUGJ RF Power Transistor -- ART2K5TFUSJ RF Power Transistor -- ART2K5TPUY RF Power Transistor -- ART35FEU RF Power Transistor -- ART450FEU RF Power Transistor -- ART700FHU RF Power Transistor -- ART800PEY RF Power Transistor -- BLA9G1011L-300U RF Power Transistor -- BLA9H0912L-1200PU RF Power Transistor -- BLA9H0912L-250U RF Power Transistor -- BLA9H0912L-700U RF Power Transistor -- BLF0910H9LS750PU RF Power Transistor -- BLF188XR RF Power Transistor -- BLF647P,112 RF Power Transistor -- BLF888A RF Power Transistor -- BLF944PU RF Power Transistor -- BLF974PU RF Power Transistor -- BLF978PU RF Power Transistor -- BLF981SU RF Power Transistor -- BLF984PU RF Power Transistor -- BLF989ESU RF Power Transistor -- BLF989EU RF Power Transistor -- BLF989U RF Power Transistor -- BLL9G1214L-600U RF Power Transistor -- BLP0408H9S30XY RF Power Transistor -- BLP0427M9S20XY RF Power Transistor -- BLP15H9S100XY RF Power Transistor -- BLP15H9S10XY RF Power Transistor -- BLP15H9S30XY RF Power Transistor -- BLP15M9S70GXY RF Power Transistor -- BLP15M9S70XY RF Power Transistor -- BLP5LA55SGXY RF Power Transistor -- BLP5LA55SXY RF Power Transistor -- BLP981XY RF Power Transistor -- BLP9H10-30GZ RF Power Transistor -- BLP9LA25SGXY RF Power Transistor -- BLP9LA25SXY RF Power Transistor -- BLS9G2735L-50U RF Power Transistor -- BLU9H0408L-800PU RF Power Transistor -- CGH35015P RF Power Transistor -- CGH60030D RF Power Transistor -- CGHV1420KF RF Small Signal Transistor Bipolar/HBT -- BAP70-02,115 RF Small Signal Transistor Bipolar/HBT -- BFU520AR RF Small Signal Transistor Bipolar/HBT -- BFU520AVL RF Small Signal Transistor Bipolar/HBT -- BFU520R RF Small Signal Transistor Bipolar/HBT -- BFU520VL RF Small Signal Transistor Bipolar/HBT -- BFU520WF RF Small Signal Transistor Bipolar/HBT -- BFU520WX RF Small Signal Transistor Bipolar/HBT -- BFU520XAR RF Small Signal Transistor Bipolar/HBT -- BFU520XRR RF Small Signal Transistor Bipolar/HBT -- BFU520XRVL RF Small Signal Transistor Bipolar/HBT -- BFU520XVL RF Small Signal Transistor Bipolar/HBT -- BFU520YF RF Small Signal Transistor Bipolar/HBT -- BFU520YX RF Small Signal Transistor Bipolar/HBT -- BFU530AR RF Small Signal Transistor Bipolar/HBT -- BFU530AVL RF Small Signal Transistor Bipolar/HBT -- BFU530R RF Small Signal Transistor Bipolar/HBT -- BFU530VL RF Small Signal Transistor Bipolar/HBT -- BFU530WF RF Small Signal Transistor Bipolar/HBT -- BFU530WX RF Small Signal Transistor Bipolar/HBT -- BFU530XAR RF Small Signal Transistor Bipolar/HBT -- BFU530XRR RF Small Signal Transistor Bipolar/HBT -- BFU530XRVL RF Small Signal Transistor Bipolar/HBT -- BFU530XVL RF Small Signal Transistor Bipolar/HBT -- BFU550AR RF Small Signal Transistor Bipolar/HBT -- BFU550AVL RF Small Signal Transistor Bipolar/HBT -- BFU550R RF Small Signal Transistor Bipolar/HBT -- BFU550VL RF Small Signal Transistor Bipolar/HBT -- BFU550WF RF Small Signal Transistor Bipolar/HBT -- BFU550WX RF Small Signal Transistor Bipolar/HBT -- BFU550XAR RF Small Signal Transistor Bipolar/HBT -- BFU550XRR RF Small Signal Transistor Bipolar/HBT -- BFU550XRVL RF Small Signal Transistor Bipolar/HBT -- BFU550XVL RF Small Signal Transistor Bipolar/HBT -- BFU580GX RF Small Signal Transistor Bipolar/HBT -- BFU580QX RF Small Signal Transistor Bipolar/HBT -- BFU590GX RF Small Signal Transistor Bipolar/HBT -- BFU590QX RF Small Signal Transistor Bipolar/HBT -- BFU610F,115 RF Small Signal Transistor Bipolar/HBT -- BFU630F,115 RF Small Signal Transistor Bipolar/HBT -- BFU660F,115 RF Small Signal Transistor Bipolar/HBT -- BFU690F,115 RF Small Signal Transistor Bipolar/HBT -- BFU710F,115 RF Small Signal Transistor Bipolar/HBT -- BFU725F/N1,115 RF Small Signal Transistor Bipolar/HBT -- BFU730F,115 RF Small Signal Transistor Bipolar/HBT -- BFU730LXZ RF Small Signal Transistor Bipolar/HBT -- BFU760F,115 RF Small Signal Transistor Bipolar/HBT -- BFU768F,115 RF Small Signal Transistor Bipolar/HBT -- BFU790F,115 RF Small Signal Transistor Bipolar/HBT -- BFX48 RF Small Signal Transistor Bipolar/HBT -- BUY47-QR-B RF Small Signal Transistor MOSFET -- BSS83,215 RF Small Signal Transistor MOSFET -- BTS6303UJ Silicon Carbide MOSFET Modules -- APTSM120AM08CT6AG Silicon Carbide MOSFET Modules -- APTSM120AM14CD3 Silicon Carbide MOSFET Modules -- APTSM120AM25CT3AG Silicon Carbide MOSFET Modules -- APTSM120AM55CT1 Silicon Carbide MOSFET Modules -- APTSM120TA10CT3AG Silicon Carbide MOSFET Modules -- APTSM120TAM33CTPAG Silicon Carbide MOSFET Modules -- APTSM70AM05CT6AG Silicon Carbide MOSFET Modules -- APTSM70AM06CD3AG Silicon Carbide MOSFET Modules -- APTSM70AM15CT3AG Silicon Carbide MOSFET Modules -- APTSM70AM30CT1AG Silicon Carbide MOSFET Modules -- APTSM70HM30CT3A Silicon Carbide MOSFET Modules -- APTSM70TAM20CTPAG Silicon Carbide MOSFET Modules -- APTSM70TAM60CT3AG Silicon Carbide MOSFET Modules -- CAB004A12GM4 Silicon Carbide MOSFET Modules -- CAB004A12GM4T Silicon Carbide MOSFET Modules -- CAB006A12GM4 Silicon Carbide MOSFET Modules -- CAB006A12GM4T Silicon Carbide MOSFET Modules -- CAS110M12BM2 Silicon Carbide MOSFET Modules -- CAS110M12BM2T Silicon Carbide MOSFET Modules -- CBB017M12FM4 Silicon Carbide MOSFET Modules -- CBB017M12FM4T Silicon Carbide MOSFETs -- C3M0032120U2-TR Silicon Carbide MOSFETs -- C3M0040120U2-TR Silicon Carbide MOSFETs -- C3M0075120U2-TR Silicon Carbide MOSFETs -- C4MS025075U2-TR Silicon Carbide MOSFETs -- C4MS045075U2-TR Silicon Carbide MOSFETs -- C4MV015065T-TR Silicon Carbide MOSFETs -- C4MV025065T-TR Silicon Carbide MOSFETs -- C4MV045065T-TR Silicon Carbide MOSFETs -- C4MV060065T-TR	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon Carbide MOSFETs -- C3M0016120U2-TR	SiC, MOSFET, 16 mOhm,1200V, TSC (U2), Industrial
Silicon Carbide MOSFETs -- C3M0021120U2-TR	SiC, MOSFET, 21 mOhm,1200V, TSC (U2), Industrial
Silicon Carbide MOSFETs -- C2M0280120D	Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to...
Silicon Carbide MOSFETs -- C3M0060065D	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode...
Silicon Carbide MOSFETs -- C3M0015065D Silicon Carbide MOSFETs -- C3M0040120D Silicon Carbide MOSFETs -- C3M0060065K	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide MOSFETs -- C3M0060065J Silicon Carbide MOSFETs -- C3M0060065J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide MOSFETs -- C3M0032120J1 Silicon Carbide MOSFETs -- C3M0032120J1-TR Silicon Carbide MOSFETs -- C3M0040120K	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0025065J1 Silicon Carbide MOSFETs -- C3M0025065J1-TR Silicon Carbide MOSFETs -- C3M0040120J1 Silicon Carbide MOSFETs -- C3M0040120J1-TR Silicon Carbide MOSFETs -- C3M0045065J1 Silicon Carbide MOSFETs -- C3M0045065J1-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide MOSFETs -- C3M0015065K	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking...
Silicon Carbide MOSFETs -- C3M0065100J-TR Silicon Carbide MOSFETs -- C3M0120100J	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide MOSFETs -- C3M0120090D Silicon Carbide MOSFETs -- C3M0280090D	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide MOSFETs -- C3M0065090D Silicon Carbide MOSFETs -- C3M0065090J Silicon Carbide MOSFETs -- C3M0065090J-TR Silicon Carbide MOSFETs -- C3M0120090J Silicon Carbide MOSFETs -- C3M0280090J Silicon Carbide MOSFETs -- C3M0280090J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
Silicon Carbide MOSFETs -- C3M0030090K Silicon Carbide MOSFETs -- C3M0065100K Silicon Carbide MOSFETs -- C3M0120100K	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0160120D Silicon Carbide MOSFETs -- C3M0160120J Silicon Carbide MOSFETs -- C3M0160120J-TR Silicon Carbide MOSFETs -- C3M0350120D Silicon Carbide MOSFETs -- C3M0350120J Silicon Carbide MOSFETs -- C3M0350120J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to...
Silicon Carbide MOSFET Modules -- CAR600M12HN6 Silicon Carbide MOSFET Modules -- CAR600M12HN6T	Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior...
Silicon Carbide MOSFET Modules -- CAR600M17HN6 Silicon Carbide MOSFET Modules -- CAR600M17HN6T	Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway,...
Silicon Carbide MOSFET Modules -- CAS380M17HM3 Silicon Carbide MOSFET Modules -- CAS380M17HM3T	Technical Features Ultra-Low Loss, High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Anti-Parallel Schottky Diode Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives...
Silicon Carbide MOSFET Modules -- CAB500M17HM3 Silicon Carbide MOSFET Modules -- CAB500M17HM3T Silicon Carbide MOSFET Modules -- CAB650M17HM3 Silicon Carbide MOSFET Modules -- CAB650M17HM3T	Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable...
RF Power Transistor -- ARF1500	The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
RF Power Transistor -- ARF1505	The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
RF Power Transistor -- ARF1510	The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
RF Power Transistor -- ARF1511	The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
RF Power Transistor -- ARF1519	The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
RF Power Transistor -- ARF300	The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
RF Power Transistor -- ARF446G	The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF447G	The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF460AG	The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF460BG	The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF463AG	The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463AP1G	The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF463BG	The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463BP1G	The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF465AG	The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF465BG	The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF466AG	The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466BG	The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466FL	The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
RF Power Transistor -- ARF475FL	The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
RF Power Transistor -- ARF476FL	The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
Silicon Carbide MOSFETs -- C2M0160120D	The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and...
RF Power Transistor -- CGHV27030S	The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal...
Silicon Carbide MOSFET Modules -- B0-SP12CFA016ME-PD98G68T	The first module of this new product family is well suited for a DC fast charger PFC converter stage up to 35 kW power, a “sweet spot” for building scalable...
Silicon Carbide MOSFET Modules -- APTMC120TAM12CTPAG Silicon Carbide MOSFET Modules -- APTMC120TAM17CTPAG Silicon Carbide MOSFET Modules -- APTMC120TAM33CTPAG	Triple Phase leg SiC MOSFET Power Module
RF Power Transistor -- ARF1501	With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing...
RF Power Transistor -- ARF461AG RF Power Transistor -- ARF461BG	With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing...
Silicon Carbide MOSFETs -- C3M0120065D Silicon Carbide MOSFETs -- C3M0120065J Silicon Carbide MOSFETs -- C3M0120065J-TR	Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Silicon Carbide MOSFETs -- C3M0025065D Silicon Carbide MOSFETs -- C3M0025065K	Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Silicon Carbide MOSFETs -- C3M0045065D Silicon Carbide MOSFETs -- C3M0045065K	Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Silicon Carbide MOSFETs -- C3M0016120K	Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based,...
Silicon Carbide MOSFETs -- C3M0016120D Silicon Carbide MOSFETs -- C3M0021120D Silicon Carbide MOSFETs -- C3M0032120D	Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product...
Silicon Carbide MOSFETs -- C3M0032120K	Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology...
Silicon Carbide MOSFET Modules -- CAB400M12XM3 Silicon Carbide MOSFET Modules -- CAB425M12XM3 Silicon Carbide MOSFET Modules -- CAB450M12XM3	Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight...
Silicon Carbide MOSFET Modules -- CAB011M12FM3 Silicon Carbide MOSFET Modules -- CAB011M12FM3T Silicon Carbide MOSFET Modules -- CAB016M12FM3 Silicon Carbide MOSFET Modules -- CAB016M12FM3T Silicon Carbide MOSFET Modules -- CCB021M12FM3 Silicon Carbide MOSFET Modules -- CCB021M12FM3T Silicon Carbide MOSFET Modules -- CCB032M12FM3 Silicon Carbide MOSFET Modules -- CCB032M12FM3T	Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice...

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