Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation... | |
| 1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device... | |
| 1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease... | |
| 1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
| 1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
| 1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third... | |
| 1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
| 1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third... | |
| 180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions... | |
| 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche... | |
| 300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters. | |
| 40W, 16dB gain @ 175MHz. General purpose RF power MOSFET | |
| 1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the... | |
| Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to Latch-up High Gate Resistance for Drives Benefits Higher System Efficiency... | |
| Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses... | |
| Features High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back... | |
| Features High blocking voltage with low on-resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Benefits Higher System Efficiency Low... | |
| Features Industry Standard 62mm Footprint Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum... | |
| Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and... | |
| Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
| Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and... | |
| Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching... | |
| Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible... | |
| Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low On-resistance High speed switching with low capacitances 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate... | |
| Silicon Carbide, Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low-Inductance (6.7 nH) Design Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator... | |
| Silicon Carbide, Half-Bridge Module Technical Features Ultra-Low Loss High Frequency Operation Light Weight AlSiC Baseplate Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Typical Applications e-Mobility and Motor... | |
| Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V... | |
| Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride... | |
| Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters... | |
| Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy... | |
| Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters... | |
| Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications... | |
| Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail... | |
| Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient... | |
| Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse... | |
| Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward... | |
| C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and... | |
| CC2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)... | |
| Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with... | |
| Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System... | |
| Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compliant Benefits... | |
| Features Industry compatible drive voltage 15V...18V/-5V...0V Soft body diode with low Vds overshoot and ringing Low Rds(on) at high operating temperatures Improved device capacitances ratio (Ciss/Crss) High transient voltage robustness... | |
| Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance... | |
| Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output... | |
| Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent... | |
| Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent... | |
| Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /... | |
| Full - Bridge MOSFET Power Module | |
| High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 Application AC Motor Control, Motion/Servo... | |
| High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals Application AC Motor Control, Motion/Servo Control, Power Supply, etc | |
| Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High... | |
| Microsemi manufacturer’s part number: APTMC120AM20CT1AG Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode... | |
| Phase leg MOSFET Power Module | |
| Phase leg SiC MOSFET Power Module | |
| Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel... | |
| RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SiC DMOSFET, 650V Vds, RDS On 15 mOhm, Al Source, Ni/Au Drain 8"" | |
| Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
| Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to... | |
| Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior... | |
| Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway,... | |
| Technical Features Ultra-Low Loss, High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Anti-Parallel Schottky Diode Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives... | |
| Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable... | |
| The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. | |
| The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40... | |
| The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and... | |
| The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator... | |
| The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. | |
| The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at... | |
| The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
| The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
| The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
| The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
| The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... | |
| The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... | |
| The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... | |
| The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... | |
| The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. | |
| The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. | |
| The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... | |
| The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... | |
| The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for... | |
| The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... | |
| The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... | |
| The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and... | |
| The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The... | |
| The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety... | |
| The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA... | |
| The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is... | |
| The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It... | |
| The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can... | |
| The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC... | |
| The first module of this new product family is well suited for a DC fast charger PFC converter stage up to 35 kW power, a “sweet spot” for building scalable... | |
| Triple Phase leg SiC MOSFET Power Module | |
| With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing... | |
| With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing... | |
| Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
| Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
| Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
| Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product... | |
| Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology... | |
| Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight... | |
| Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice... | |
| Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 | |
| Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals | |
| Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals |
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