Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation...
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device...
1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease...
1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions...
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche...
300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the...
Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to Latch-up High Gate Resistance for Drives Benefits Higher System Efficiency...
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses...
Features High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back...
Features High blocking voltage with low on-resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Benefits Higher System Efficiency Low...
Features Industry Standard 62mm Footprint Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum...
Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and...
Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and...
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible...
Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low On-resistance High speed switching with low capacitances 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate...
Silicon Carbide, Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low-Inductance (6.7 nH) Design Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator...
Silicon Carbide, Half-Bridge Module Technical Features Ultra-Low Loss High Frequency Operation Light Weight AlSiC Baseplate Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Typical Applications e-Mobility and Motor...
Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V...
Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications...
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail...
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward...
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and...
CC2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)...
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with...
Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System...
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compliant Benefits...
Features Industry compatible drive voltage 15V...18V/-5V...0V Soft body diode with low Vds overshoot and ringing Low Rds(on) at high operating temperatures Improved device capacitances ratio (Ciss/Crss) High transient voltage robustness...
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance...
Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output...
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /...
Full - Bridge MOSFET Power Module
High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585 Application AC Motor Control, Motion/Servo...
High Power Switching Use Insulated Type Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals Application AC Motor Control, Motion/Servo Control, Power Supply, etc
Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High...
Microsemi manufacturer’s part number: APTMC120AM20CT1AG Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode...
Phase leg MOSFET Power Module
Phase leg SiC MOSFET Power Module
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel...
RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
SiC DMOSFET, 650V Vds, RDS On 15 mOhm, Al Source, Ni/Au Drain 8""
Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to...
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior...
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway,...
Technical Features Ultra-Low Loss, High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Anti-Parallel Schottky Diode Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable...
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and...
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The...
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety...
The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA...
The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is...
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It...
The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can...
The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC...
The first module of this new product family is well suited for a DC fast charger PFC converter stage up to 35 kW power, a “sweet spot” for building scalable...
Triple Phase leg SiC MOSFET Power Module
With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing...
With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing...
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product...
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology...
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight...
Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice...
Flat base type Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive compliant UL Recognized under UL1557, File No.E323585
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pin terminals
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals

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