GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, lead-free 4 mm 24-lead PQFN plastic package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications.
The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications.
RF JFET Transistors M/A-COM Technology Solutions
| Richardson RFPD | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | MAGX-011086 | MAGX-011086 |
| Product Name | RF Power Transistor | RF JFET Transistors |
| Transistor Technology / Material | GaN | |
| Package Type | Plastic SMT | |
| Power Gain | 9 dB |
