MACOM RF Power Transistor MRF275G

Description
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
Request a Quote Datasheet
Description
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF275G - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF275G
RF Power Transistor MRF275G
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.

Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.

Supplier's Site Datasheet
RF FETs, MOSFETs - 1465-1173-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-1173-ND
RF FETs, MOSFETs 1465-1173-ND
RF Mosfet 2 N-Channel (Dual) Common Source 28V 100mA 500MHz 11.2dB 150W 375-04, Style 2

RF Mosfet 2 N-Channel (Dual) Common Source 28V 100mA 500MHz 11.2dB 150W 375-04, Style 2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF275G - 885919-MRF275G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF275G
885919-MRF275G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF275G 885919-MRF275G
Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 885919-MRF275G Features: RF Mosfet 2 N-Channel (Dual) Common Source 28 V 100 mA 500MHz 11.2dB 150W 375-04, Style 2 Package: Tray Package: 375-04 Family Name: MRF275 Categories: Discrete Semiconductor Products Case / Package: 375-04, Style 2 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Quantity per package: 10 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 19 Weeks HTSUS: 8541.29.0075

Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 885919-MRF275G
Features: RF Mosfet 2 N-Channel (Dual) Common Source 28 V 100 mA 500MHz 11.2dB 150W 375-04, Style 2
Package: Tray
Package: 375-04
Family Name: MRF275
Categories: Discrete Semiconductor Products
Case / Package: 375-04, Style 2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 10
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 19 Weeks
HTSUS: 8541.29.0075

Buy Now Datasheet
RF FETs, MOSFETs - MRF275G - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
MRF275G
RF FETs, MOSFETs MRF275G
FET RF 2CH 65V 500MHZ 375-04

FET RF 2CH 65V 500MHZ 375-04

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MRF275G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MRF275G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MRF275G
RF MOSFET 28V 375-04

RF MOSFET 28V 375-04

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Transistors Transistors RF MOSFET Transistors RF Transistors
Product Number MRF275G 1465-1173-ND 885919-MRF275G MRF275G MRF275G
Product Name RF Power Transistor RF FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF275G RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Output Power 150 watts
Power Gain 10 dB 11.2 dB
Operating Frequency 2 to 500 MHz 500 MHz
Package Type Ceramic Flanged 375-04 SOT3; 375-04, Style 2 375-04
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