Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance
M6 power connectors
Benefits
High efficiency converter
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible Power Supplies
EV motor and traction drive
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Datasheet
Description
Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance
M6 power connectors
Benefits
High efficiency converter
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible Power Supplies
EV motor and traction drive
Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance
M6 power connectors
Benefits
High efficiency converter
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible Power Supplies
EV motor and traction drive
Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance