Microchip Technology, Inc. RF Power Transistor DRF1200

Description
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
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Description
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.
Request a Quote

Suppliers

Company
Product
Description
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RF Power Transistor - DRF1200 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
DRF1200
RF Power Transistor DRF1200
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number DRF1200
Product Name RF Power Transistor
Output Power 400 watts
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