Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size
Features
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small package size
Zero reverse recovery charge
Applications
Synchronous rectification
Class-D audio
High Frequency DC-DC converter
Communication base station
Motor driver
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small package size
- Zero reverse recovery charge
Applications
- Synchronous rectification
- Class-D audio
- High Frequency DC-DC converter
- Communication base station
- Motor driver
