MACOM RF Power Transistor MAPC-A1500-ABTR1

Description
The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1 dBm) at 65 V and 2000 W(63.0 dBm) at 50 V and in an air cavity ceramicpackage.
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Description
The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1 dBm) at 65 V and 2000 W(63.0 dBm) at 50 V and in an air cavity ceramicpackage.
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RF Power Transistor - MAPC-A1500-ABTR1 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MAPC-A1500-ABTR1
RF Power Transistor MAPC-A1500-ABTR1
The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1 dBm) at 65 V and 2000 W(63.0 dBm) at 50 V and in an air cavity ceramicpackage.

The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1 dBm) at 65 V and 2000 W(63.0 dBm) at 50 V and in an air cavity ceramicpackage.

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Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MAPC-A1500-ABTR1
Product Name RF Power Transistor
Transistor Technology / Material GaN
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