Semelab Plc. RF Power Transistor D5011UK

The D5011UK is a metal gate RF silicon FET in an SO8 package, measuring 4.06 mm by 5.08 mm, designed for broadband RF amplifier applications from 1 MHz to 1 GHz. It supports a maximum drain-source voltage of 125 V, continuous drain current of 3 A, and power dissipation of 30 W with a maximum junction temperature of 200°C. The device offers minimum gain of 13 dB, drain efficiency of 50% at 50 V and 0.1 A quiescent current, and input and output capacitances of 60 pF and 25 pF respectively at 1 MHz. It exhibits low noise, low C rss, and load mismatch tolerance up to 20:1 at 500 MHz. Thermal resistance from junction to case is 6°C/W. The ceramic portion contains toxic beryllium oxide, requiring careful handling. The device is intended for HF/VHF/UHF communications.