MACOM RF Power Transistor MRF176GV

Description
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel fre
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Description
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel fre
Request a Quote
Datasheet
Datasheet Summary
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The 1325008-MRF176GV is an RF MOSFET designed for broadband commercial and military applications, particularly suitable for push-pull circuits operating up to 500 MHz. It features a dual N-Channel configuration with a rated output power of 200 W at 225 MHz and a power gain of 17 dB. The device operates at a voltage of 50 V and has a typical efficiency of 55%. It is ruggedness tested at rated output power, ensuring reliability in demanding environments. The low thermal resistance and low Crss of 7.0 pF at VDS = 50 V contribute to its performance. The product is packaged in a 375-04 case style and is RoHS3 compliant, making it suitable for various applications while adhering to environmental standards.

Datasheet Summary
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The 1325008-MRF176GV is an RF MOSFET designed for broadband commercial and military applications, particularly suitable for push-pull circuits operating up to 500 MHz. It features a dual N-Channel configuration with a rated output power of 200 W at 225 MHz and a power gain of 17 dB. The device operates at a voltage of 50 V and has a typical efficiency of 55%. It is ruggedness tested at rated output power, ensuring reliability in demanding environments. The low thermal resistance and low Crss of 7.0 pF at VDS = 50 V contribute to its performance. The product is packaged in a 375-04 case style and is RoHS3 compliant, making it suitable for various applications while adhering to environmental standards.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF176GV - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF176GV
RF Power Transistor MRF176GV
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel fre

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel fre

Supplier's Site Datasheet
RF FETs, MOSFETs - 1465-1171-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-1171-ND
RF FETs, MOSFETs 1465-1171-ND
RF Mosfet 2 N-Channel (Dual) Common Source 50V 100mA 225MHz 17dB 200W 375-04, Style 2

RF Mosfet 2 N-Channel (Dual) Common Source 50V 100mA 225MHz 17dB 200W 375-04, Style 2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1325008-MRF176GV - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1325008-MRF176GV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1325008-MRF176GV
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325008-MRF176GV Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tray Standard Package: 10 Voltage - Rated: 125 V Frequency: 225MHz Current - Test: 100 mA Gain: 17dB Transistor Type: 2 N-Channel (Dual) Common Source Voltage - Test: 50 V Power - Output: 200W Supplier Device Package: 375-04, Style 2 Case / Package: 375-04 ECCN: EAR99 Fake Threat In the Open Market: 68 MSL Level: 1 (Unlimited) Current Rating (Amps): 16A HTSUS: 8541.29.0040 Other Part Number: 1465-1171 Base Product Number: MRF176 RoHS Status: ROHS3 Compliant

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325008-MRF176GV
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Packaging: Tray
Standard Package: 10
Voltage - Rated: 125 V
Frequency: 225MHz
Current - Test: 100 mA
Gain: 17dB
Transistor Type: 2 N-Channel (Dual) Common Source
Voltage - Test: 50 V
Power - Output: 200W
Supplier Device Package: 375-04, Style 2
Case / Package: 375-04
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
Current Rating (Amps): 16A
HTSUS: 8541.29.0040
Other Part Number: 1465-1171
Base Product Number: MRF176
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MRF176GV - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MRF176GV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MRF176GV
RF MOSFET 50V 375-04

RF MOSFET 50V 375-04

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Transistors RF MOSFET Transistors RF Transistors
Product Number MRF176GV 1465-1171-ND 1325008-MRF176GV MRF176GV
Product Name RF Power Transistor RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Output Power 200 watts 200 watts
Power Gain 17 dB 17 dB
Operating Frequency 2 to 500 MHz 225 MHz
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