Microchip Technology, Inc. Single FETs, MOSFETs MSC750SMA170SA

MOSFET SIC 1700 V 750 MOHM TO-26

N-Channel 1700V 6A (Tc) 63W (Tc) Surface Mount TO-268

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. TheMSC750SMA170SA device is a 1700 V, 750 mOhm SiC MOSFET in a TO-263 7-lead package with a source sense.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant

Benefits

• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)