Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
MOSFET SIC 1700 V 750 MOHM TO-26
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. TheMSC750SMA170SA device is a 1700 V, 750 mOhm SiC MOSFET in a TO-263 7-lead package with a source sense.
Features
Benefits
Applications
N-Channel 1700V 6A (Tc) 63W (Tc) Surface Mount TO-268
MOSFET SIC 1700 V 750 MOHM D2PAK
| Win Source Electronics | ODG (Origin Data Global) | Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | MSC750SMA170SA | MSC750SMA170SA | 150-MSC750SMA170SA-ND | MSC750SMA170SA | |
| Product Name | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 63000 milliwatts | 63000 milliwatts | |||
| Package Type | SOT3 | TO-263; TO-263-8, DPak (7 Leads + Tab) | D2PAK-7L | TO-263; TO-263-8, D2PAK (7 Leads + Tab) | TO-263; TO-263-8, DPak (7 Leads + Tab) |
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||
| V(BR)DSS | 1700 volts |