Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 0.45-6.0 GHz Low Noise Transistor | |
| 1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| 1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| 1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero... | |
| Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device... | |
| Fast IGBT4 Module | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro... | |
| Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•DC/DC - converter|•Brake... | |
| Fast Switching H Bridge Module. fastPIM 1 H. | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductance Layout 1200V IGBT and 1200V SiC diode PressFiT option Applications solar inverter | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET (Cree) and 1200V SiC diode (Cree) Target Applications Solar inverter | |
| Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET and 1200V SiC diode Integrated bypass diode Target Applications Solar Inverter UPS | |
| Features Solderless interconnection Mitsubishi Generation 6.1 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Solderless interconnection Trench Fieldstop IGBT4 technology Applications Servo Drives Industrial Motor Drives UPS | |
| Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders | |
| flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC... | |
| flowPIM 1 3rd gen, 1200V/25A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour. Applications:... | |
| flowPIM 2 3rd, 1200V/4A. | |
| IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances... | |
| Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6... | |
| MiniSKiip 2nd Gen. PIM Size 3, 1200V / 50A. | |
| MiniSKiip 2nd Gen. SIXPACK Size 2, 1200V / 50A. | |
| MiniSKiiP® IGBT4 PACK Module | |
| RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness. | |
| RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SEMITRANS® 3 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 3 Features V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) Increased power cycling capability... | |
| SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC... | |
| SEMITRANS® 4, IGBT4 Modules | |
| Six Pack with NTC. flowPACK 1. | |
| Sixpack with NTC. flowPACK 0. | |
| SPT IGBT Module|•Homogeneous Si|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders fsw up to 20 kHz... | |
| SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz... | |
| Standard Power Integrated Module with PFC. flowPIM 1 + P. | |
| Standard Power Integrated Module. flowPIM 0. | |
| Standard Power Integrated Module. flowPIM 1, 2nd Generation. | |
| Standard Power Integrated Module. flowPIM 1. | |
| Standard Power Integrated Module. flowPIM 2. | |
| Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn... | |
| Superfast NPT-IGBT Module|•N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•Very... | |
| The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input... | |
| The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters... | |
| The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
| The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
| The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
| Three phase controlled rectifier Features Isolated power stacks SKKT 162/16 Heatsink P3/265 Forced air cooling RC circuit included Thermal trip included Typical Applications Regulated power supplies Alternator excitation Motor control... | |
| Transfer Molding Type Insulated Type Main Function and Ratings RC-IGBT inverter bridge for three phase DC-to-AC power conversion Built-in bootstrap diodes with current limiting resistor Open emitter type Application AC... | |
| Trench IGBT Module | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate Technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•Mains 575 - 750 VAC|•Public transport (auxiliary syst.)|•Wind... | |
| Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders | |
| Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS | |
| Ultra Fast IGBT Module|•Homogeneous Si|•NPT-IGBT|•Vce(sa t) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Reson ant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw... | |
| Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper... | |
| Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB... | |
| Vincotech releases Press-fit versions flowPIM® 0 and flowPIM® 1 product families. All modules feature a 3-phase input rectifier, a 3-phase output inverter, a brake chopper, and an added... |
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