Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source... | |
| Features Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged SiC Schottky diode Zero reverse recovery Zero forward recovery Temp. Independent... | |
| Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent... | |
| Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable... | |
| Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable... | |
| Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very... | |
| Features Super junction MOSFET: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent... | |
| Applications Welding converters Switched mode power supplies Uninterruptible Power Supply (UPS) EV motor and traction drive Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky diode Zero reverse... | |
| Avionics Power Transistors | |
| Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. | |
| DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of... | |
| DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature... | |
| Dual-In-Line Package Intelligent Power Module. Transfer Molding Type. Insulated Type | |
| Dual-In-Line Package Intelligent Power Module | |
| Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable... | |
| Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink... | |
| Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration M5 power connectors Aluminum Nitride (AlN) substrate for improved... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for... | |
| Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance... | |
| Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for... | |
| Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient... | |
| Features SiC Power MOSFET High-speed switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low... | |
| Features SiC Power MOSFET Low RDS(on) High-speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low... | |
| Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very... | |
| Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage... | |
| Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended... | |
| Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)... | |
| Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
| Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and... | |
| Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature... | |
| Mitsubishi Intelligent Power Modules. PM100RL1A120. Flat-Base Type. Insulated Package. | |
| Mitsubishi Intelligent Power Modules. PM25RL1C120. Flat-Base Type. Insulated Package. | |
| Mitsubishi Intelligent Power Modules. PM50RL1B060. Flat-Base Type. Insulated Package. | |
| Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the... | |
| Radar Power Transistors | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features... | |
| Single Phase IGBT Inverter Output | |
| The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses... | |
| The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. Features Silicon Carbide (SiC) schottky diode IGBT4 Low stray inductance Lead frames for power connections Si3N4... | |
| The MSCSM120DUM027AG device is a 1200V/733A dual common source silicon carbide (SiC) MOSFET powermodule. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray... | |
| The MSCSM120DUM042AG device is a 1200V/495A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM120TLM16C3AG device is a 1200V/173A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse... | |
| The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM11T3AG device is a 1700V/240A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM15T3AG device is a 1700V/181A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70DUM017AG device is a 700V/1021A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70DUM10T3AG device is a 700V/241A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low... | |
| The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM70TLM07CAG device is a 700V/349A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,... | |
| The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70TLM19C3AG device is a 700V/124A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):... | |
| The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5... | |
| The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W... | |
| The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W... | |
| The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include... | |
| The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity... | |
| The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity... | |
| The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,... | |
| The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain... | |
| The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain... | |
| The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this... | |
| The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain... | |
| The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,... | |
| The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,... | |
| The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. | |
| The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down... | |
| The PTVA043502EC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with... | |
| The PTVA043502FC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with... | |
| The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down... | |
| The PTVA082407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and... | |
| The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and... | |
| The PTVA092407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and... | |
| The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down... | |
| The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with... | |
| The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. | |
| The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and... | |
| The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with... | |
| The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and... | |
| The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. | |
| The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package. Manufactured... | |
| The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with... | |
| The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. | |
| The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features... | |
| The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features... | |
| The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,... | |
| The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain... | |
| The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,... | |
| The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,... | |
| The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,... | |
| The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. | |
| The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. | |
| Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer... | |
| Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 50A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 30A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 50A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
| Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 15A/1200V (CSTBT) Application AC 400V three phase motor inverter... | |
| Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 35A/1200V (CSTBT) Application AC 400V three phase motor inverter... | |
| Wireless Bipolar Power Transistors |
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