Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source...
Features Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged SiC Schottky diode Zero reverse recovery Zero forward recovery Temp. Independent...
Features High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable...
Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features Super junction MOSFET: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent...
Applications Welding converters Switched mode power supplies Uninterruptible Power Supply (UPS) EV motor and traction drive Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky diode Zero reverse...
Avionics Power Transistors
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of...
DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature...
Dual-In-Line Package Intelligent Power Module. Transfer Molding Type. Insulated Type
Dual-In-Line Package Intelligent Power Module
Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable...
Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power...
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration M5 power connectors Aluminum Nitride (AlN) substrate for improved...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance...
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET High-speed switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High-speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage...
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended...
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and...
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature...
Mitsubishi Intelligent Power Modules. PM100RL1A120. Flat-Base Type. Insulated Package.
Mitsubishi Intelligent Power Modules. PM25RL1C120. Flat-Base Type. Insulated Package.
Mitsubishi Intelligent Power Modules. PM50RL1B060. Flat-Base Type. Insulated Package.
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the...
Radar Power Transistors
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features...
Single Phase IGBT Inverter Output
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses...
The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. Features Silicon Carbide (SiC) schottky diode IGBT4 Low stray inductance Lead frames for power connections Si3N4...
The MSCSM120DUM027AG device is a 1200V/733A dual common source silicon carbide (SiC) MOSFET powermodule. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray...
The MSCSM120DUM042AG device is a 1200V/495A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM16C3AG device is a 1200V/173A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse...
The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM11T3AG device is a 1700V/240A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM15T3AG device is a 1700V/181A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70DUM017AG device is a 700V/1021A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM10T3AG device is a 700V/241A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM07CAG device is a 700V/349A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM19C3AG device is a 700V/124A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5...
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W...
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this...
The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,...
The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,...
The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
The PTVA043502EC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
The PTVA043502FC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
The PTVA082407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and...
The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and...
The PTVA092407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and...
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package. Manufactured...
The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with...
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features...
The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain...
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 50A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 30A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 50A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 15A/1200V (CSTBT) Application AC 400V three phase motor inverter...
Transfer Molding Type Insulated Type Main Function CIB (Converter+Inverter+ Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter Rating Inverter part: 35A/1200V (CSTBT) Application AC 400V three phase motor inverter...
Wireless Bipolar Power Transistors

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