MACOM RF FETs, MOSFETs MRF174

Description
RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-11, Style 2
Request a Quote Datasheet
Description
RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-11, Style 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 1465-1166-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-1166-ND
RF FETs, MOSFETs 1465-1166-ND
RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-11, Style 2

RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-11, Style 2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1325608-MRF174 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1325608-MRF174
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1325608-MRF174
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325608-MRF174 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tray Standard Package: 20 Voltage - Rated: 65 V Frequency: 150MHz Current - Test: 2 A Gain: 11.8dB Transistor Type: N-Channel Voltage - Test: 28 V Noise Figure: 3dB Power - Output: 125W Supplier Device Package: 211-11, Style 2 Case / Package: 211-11, Style 2 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) Current Rating (Amps): 13A HTSUS: 8541.29.0095 Other Part Number: 1465-1166 RoHS Status: ROHS3 Compliant

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325608-MRF174
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Packaging: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 150MHz
Current - Test: 2 A
Gain: 11.8dB
Transistor Type: N-Channel
Voltage - Test: 28 V
Noise Figure: 3dB
Power - Output: 125W
Supplier Device Package: 211-11, Style 2
Case / Package: 211-11, Style 2
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
Current Rating (Amps): 13A
HTSUS: 8541.29.0095
Other Part Number: 1465-1166
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
RF Power Transistor - MRF174 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF174
RF Power Transistor MRF174
Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.

Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MRF174 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MRF174
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MRF174
RF MOSFET 28V 211-11

RF MOSFET 28V 211-11

Supplier's Site
RF FETs, MOSFETs - MRF174 - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
MRF174
RF FETs, MOSFETs MRF174
FET RF 65V 150MHZ 211-11

FET RF 65V 150MHZ 211-11

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Richardson RFPD Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors RF MOSFET Transistors RF MOSFET Transistors RF Transistors RF MOSFET Transistors
Product Number 1465-1166-ND 1325608-MRF174 MRF174 MRF174 MRF174
Product Name RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF FETs, MOSFETs
Package Type 211-11, Style 2 SOT3; 211-11, Style 2 Ceramic Flanged 211-11, Style 2 211-11, Style 2
Polarity N-Channel N-Channel; N-Channel
Output Power 125 watts 125 watts
Power Gain 11.8 dB 9 dB 11.8 dB
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