GaN Systems Inc. GaN Power Transistor GS-065-080-1-D2-E01

The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. These features combine to provide very high efficiency power switching. Ultra-low FOM Island Technology® die Easy gate drive requirements Transient tolerant gate drive (-20 / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss Small 6.6 x 5.6 mm PCB footprint RoHS 6 compliant Dual gate drive for optimized layout and paralleling Applications High efficiency power conversion High density power conversion AC-DC Converters On Board Battery Chargers Traction Drive Bridgeless Totem Pole PFC ZVS Phase Shifted Full Bridge Half Bridge topologies Synchronous Buck or Boost Uninterruptable Power Supplies Industrial Motor Drives Single and 3 phase inverter legs Solar Power Fast Battery Charging DC-DC converter Energy Storage Systems