Microchip Technology, Inc. Silicon Carbide MOSFETs MSC750SMA170B4

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T_J(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS Compliant

Benefits

• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter and industrial motor drives
• Smart grid transmission and distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution

Win Source Part Number: 1350551-MSC750SMA170B4
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 90
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 68W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V

N-Channel 1700V 7A (Tc) 68W (Tc) Through Hole TO-247-4