TRANS SJT 1700V TO247-4 Product overview: MSC750SMA170B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC750SMA170B4 can be used for catalog matching and distributor lookup.
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense.
Features
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Applications
Win Source Part Number: 1350551-MSC750SMA170
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 90
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Power Dissipation (Max): 68W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Vgs (Max): +23V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
N-Channel 1700V 7A (Tc) 68W (Tc) Through Hole TO-247-4
TRANS SJT 1700V TO247-4
| ERSAELECTRONICS PTE. LTD. | Richardson RFPD | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors |
| Product Number | 278-MSC750SMA170B4 | MSC750SMA170B4 | 1350551-MSC750SMA170B4 | 150-MSC750SMA170B4-ND | MSC750SMA170B4 |
| Product Name | 1700V MOSFET Transistor | Silicon Carbide MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 68000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tube | TO-247; TO-247-4L | TO-247; SOT3 | TO-247; TO-247-4 | TO-247; TO-247-4 |