700V, 90 mΩ typical silicon carbide N-channel MOSFET in a 16-lead surface mount top-side cooled (PSMT) package weighing 0.83 g, designed for high-efficiency power conversion in applications such as PV inverters, EV chargers, and industrial motor drives. It operates with a maximum junction temperature of 175 °C, has a drain-source on-resistance of 90 mΩ at V_GS = 20V and 102 mΩ at V_GS = 18V, and features a body diode that eliminates the need for an external freewheeling diode. The device is RoHS compliant and supports pulsed drain currents up to 126 A. Junction-to-case thermal resistance is 0.70 to 0.91 °C/W. Total gate charge is 41 nC at the recommended operating voltage.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC090SMA070SCT/R |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0900 ohms |
