Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSC130SM120JCU2

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits High efficiency converter Very low stray inductance Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake Switch
  • Silicon Carbide MOSFET Modules - MSC130SM120JCU2 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC130SM120JCU2 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits High efficiency converter Very low stray inductance Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake Switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSC130SM120JCU2 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSC130SM120JCU2
Silicon Carbide MOSFET Modules MSC130SM120JCU2
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits High efficiency converter Very low stray inductance Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications AC and DC motor control Switched mode power supplies Power factor correction Brake Switch

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF

Benefits

  • High efficiency converter
  • Very low stray inductance
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched mode power supplies
  • Power factor correction
  • Brake Switch
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC130SM120JCU2 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC130SM120JCU2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC130SM120JCU2
SICFET N-CH 1.2KV 173A SOT227

SICFET N-CH 1.2KV 173A SOT227

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC130SM120JCU2 MSC130SM120JCU2
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-227 SOT-227-4, miniBLOC
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