Microchip Technology, Inc. Silicon Carbide MOSFETs MSC035SMA070B4

Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mOhm SiC MOSFET in a TO-247 lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
  • Single FETs, MOSFETs - 150-MSC035SMA070B4-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - MSC035SMA070B4 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 700V, 77A, To-247 Rohs Compliant Microchip - 29AK2553 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC035SMA070B4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mOhm SiC MOSFET in a TO-247 lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC035SMA070B4
Silicon Carbide MOSFETs MSC035SMA070B4
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mOhm SiC MOSFET in a TO-247 lead package with a source sense. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mOhm SiC MOSFET in a TO-247 lead package with a source sense.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC035SMA070B4-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC035SMA070B4-ND
Single FETs, MOSFETs 150-MSC035SMA070B4-ND
N-Channel 700V 77A (Tc) 283W (Tc) Through Hole TO-247-4

N-Channel 700V 77A (Tc) 283W (Tc) Through Hole TO-247-4

Buy Now Datasheet
Single FETs, MOSFETs - MSC035SMA070B4 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSC035SMA070B4
Single FETs, MOSFETs MSC035SMA070B4
TRANS SJT N-CH 700V 77A TO247-4

TRANS SJT N-CH 700V 77A TO247-4

Supplier's Site Datasheet
Mosfet, N-Ch, 700V, 77A, To-247 Rohs Compliant Microchip - 29AK2553 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 700V, 77A, To-247 Rohs Compliant Microchip
29AK2553
Mosfet, N-Ch, 700V, 77A, To-247 Rohs Compliant Microchip 29AK2553
MOSFET, N-CH, 700V, 77A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 700V, 77A, TO-247 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC035SMA070B4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC035SMA070B4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC035SMA070B4
TRANS SJT N-CH 700V 77A TO247-4

TRANS SJT N-CH 700V 77A TO247-4

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSC035SMA070B4 150-MSC035SMA070B4-ND MSC035SMA070B4 29AK2553 MSC035SMA070B4
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 700V, 77A, To-247 Rohs Compliant Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0350 ohms
Package Type TO-247; TO-247-4L TO-247; TO-247-4 TO-247; TO-247-4 TO-3; TO-247 TO-247; TO-247-4
Polarity N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
V(BR)DSS 700 volts
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