The DC35GN-15-D3 is a 15 W broadband GaN on SiC HEMT transistor for RF amplification from 30 to 3500 MHz, designed for pulsed or CW operation in class AB. It is housed in a 3x6 mm plastic DFN package with an exposed thermal paddle and 14 pins, including RF/DC ground connections. The device supports a drain-source voltage up to 65 V, operates with a junction temperature up to +200 °C, and has a thermal resistance of 4.2 °C/W under 128 μs pulse width and 10% duty cycle. It achieves 18 dB typical power gain and 65% drain efficiency at 960-1215 MHz with 50 V drain bias. The part is ESD-sensitive and classified as Class 1B.
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | DC35GN-15-D3 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
