Microchip Technology, Inc. RF Power Transistor DC35GN-15-D3

Description
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.
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Description
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.
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Suppliers

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RF Power Transistor - DC35GN-15-D3 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
DC35GN-15-D3
RF Power Transistor DC35GN-15-D3
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.

The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz band. This transistor can be used for narrow or broadband pulsed or CW applications. Housed in a 3x6mm Plastic DFN SMT package and offering small size and weight.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number DC35GN-15-D3
Product Name RF Power Transistor
Transistor Technology / Material GaN
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