Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM03CT6LIAG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120AM03CT6LIAG
Silicon Carbide MOSFET Modules MSCSM120AM03CT6LIAG
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible Power Supplies EV motor and traction drive

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • M4 and M5 power connectors
  • M2.5 signals connectors
  • AlN substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible Power Supplies
  • EV motor and traction drive
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM03CT6LIAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120AM03CT6LIAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120AM03CT6LIAG
SIC 2N-CH 1200V 805A SP6C LI

SIC 2N-CH 1200V 805A SP6C LI

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120AM03CT6LIAG MSCSM120AM03CT6LIAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6LI
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