Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| VINco E3, the new low-profile package for motion control, solar and UPS applications Featuring the SLC (SoLid Cover) technology in the industry-standard low-profile package, Vincotech’s new VINco E3 package enables... | |
| Boost IGBT/SiC diode | |
| Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier... | |
| Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... | |
| Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... | |
| ENGINEERING SAMPLES IN STOCK Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids has expanded its product portfolio by introducing a family... | |
| Features Compact Flow 2 housing Trench Fieldstop IGBT4 Technology Compact and Low Inductance Design Built-in NTC Applications Motor Drives Power Generation | |
| Features Compact Flow 2 housing Trench Fieldstop IGBT4 Technology Compact and Low Inductive Design Built-in NTC Applications Motor Drives Power Generation | |
| Features Enhanced efficiency Enables high switching frequencies Low inductive package Allows four quadrant operation Applications Industrial Drives Solar Inverters UPS | |
| Features Half bridge topology Trench IGBT and CAL diode chip technology Integrated NTC sensor Solderless spring contact mounting system Applications Industrial Drives Power Supply Solar UPS | |
| Features Half-Bridge topology Trench IGBT and CAL diode chip technology Integrated NTC sensor Solderless spring contact mounting system Applications Industrial Drive Power Supply Solar UPS | |
| Features High Efficient Advanced Paralleled NPC Topology Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses High Power Screw Interface Integrated DC-Snubber Capacitors Temperature Sensor Applications Solar Inverter UPS... | |
| Features High efficient half bridge Full current reverse diodes Integrated thermistor Applications Industrial Drives Power Supply Solar UPS | |
| Features IGBT M7 technology with low V CEsat and improved EMC behavior New SoLid Cover Technology for higher reliability Industry standard housing Press-fit pin and pre-applied phase-change Thermal Interface Material... | |
| Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Extended current range up to 200 A Solder-free spring contact technology Target Applications Industrial Drives | |
| Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Solder-free spring contact technology Target Applications Industrial Drives | |
| Features Low VCEsat with the new 7th gen Mitsubishi chip generation Max Junction Temperature Tvjmax 175 C Solid cover technology for higher reliability Industry standard housing Press-fit pin... | |
| Features NPC topology up to 2400Vdc High efficiency Low inductive package Applications Solar Inverters | |
| Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature... | |
| Features Sixpack topology Open emitter configuration Solder-free spring contact technology Integrated thermal sensor Applications Embedded Drives Industrial Drives | |
| Features Symmetrical Booster Integrated DC-capacitor Low DC Inductance (<5nH) Transient Interface for optional regeneration of switching losses Temperature Sensor Applications UPS (3 Phase PFC) Solar inverter (Booster) | |
| Features Three-leg Booster module Full SiC for ultra fast switching frequency Low inductive package Ultra high efficient Target Applications Solar | |
| Features Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated SiC Schottky Diode: Zero reverse... | |
| Featuring a combination of SiC diodes with the latest 950 V IGBTs, the new flowNPC 2 for 1500 V multi-string inverters supports 200 kVA and higher output power. Higher efficiency... | |
| High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes... | |
| ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very... | |
| ISOTOP BOOST CHOPPER NPT IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Non Punch Through (NPT) THUNDERBOLT IGBT, ISOTOP Package (SOT-227),... | |
| ISOTOP BOOST CHOPPER TRENCH + FIELD STOP IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Trench + Field Stop IGBT Technology,... | |
| ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level... | |
| Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. | |
| Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly... | |
| POWER MOS 7® MOSFET: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power... | |
| Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® | |
| Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low... | |
| Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS... | |
| Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... | |
| POWER MOS V®. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces... | |
| POWER MOS V®: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces... | |
| RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal... | |
| RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS. | |
| Super Junction MOSFET. Ulra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energy Rated; TO-247 Package. | |
| The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses... | |
| The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in... | |
| The A5G07H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G08H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G19H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930... | |
| The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496... | |
| The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS(ON) of 80mW, allowing increased load switch power... | |
| The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it... | |
| The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications... | |
| The highly intelligent power module flowIPM 1C features CIP topology and three inverter gate drives, including a bootstrap circuit for high-side power supply. Each leg of the inverter provides current-limiting... | |
| The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications... | |
| The Power MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many... | |
| The RoadPak is our newest innovative solution for all e-mobility applications. It enables the design of converters with lowest overall stray inductance, thanks to the latest generation of SiC MOSFET... | |
| The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. | |
| The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. | |
| These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz. | |
| This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. | |
| This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz. | |
| This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz. | |
| This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800... | |
| This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700... | |
| This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700... | |
| This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. | |
| This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. | |
| This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. | |
| This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
| This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600... | |
| This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. | |
| This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690... | |
| This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400... | |
| This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... | |
| This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
| This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz. | |
| This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. | |
| This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications. | |
| This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This... | |
| This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for... | |
| Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling... | |
| Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on)... | |
| Vincotech has now extended the new industry-standard low-profile package for mid-power inverters by a sixpack configuration. Engineered mainly for industrial drives, solar power, and UPS applications, the VINcoPACK E3 raises... | |
| Vincotech's new flowPACK 2 module features high-speed IGBTs and soft-switching diodes for improved efficiency and very fast performance. Engineers seeking to streamline their designs for servo applications and line converters... |
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