Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
VINco E3, the new low-profile package for motion control, solar and UPS applications Featuring the SLC (SoLid Cover) technology in the industry-standard low-profile package, Vincotech’s new VINco E3 package enables...
Boost IGBT/SiC diode
Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
ENGINEERING SAMPLES IN STOCK Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids has expanded its product portfolio by introducing a family...
Features Compact Flow 2 housing Trench Fieldstop IGBT4 Technology Compact and Low Inductance Design Built-in NTC Applications Motor Drives Power Generation
Features Compact Flow 2 housing Trench Fieldstop IGBT4 Technology Compact and Low Inductive Design Built-in NTC Applications Motor Drives Power Generation
Features Enhanced efficiency Enables high switching frequencies Low inductive package Allows four quadrant operation Applications Industrial Drives Solar Inverters UPS
Features Half bridge topology Trench IGBT and CAL diode chip technology Integrated NTC sensor Solderless spring contact mounting system Applications Industrial Drives Power Supply Solar UPS
Features Half-Bridge topology Trench IGBT and CAL diode chip technology Integrated NTC sensor Solderless spring contact mounting system Applications Industrial Drive Power Supply Solar UPS
Features High Efficient Advanced Paralleled NPC Topology Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses High Power Screw Interface Integrated DC-Snubber Capacitors Temperature Sensor Applications Solar Inverter UPS...
Features High efficient half bridge Full current reverse diodes Integrated thermistor Applications Industrial Drives Power Supply Solar UPS
Features IGBT M7 technology with low V CEsat and improved EMC behavior New SoLid Cover Technology for higher reliability Industry standard housing Press-fit pin and pre-applied phase-change Thermal Interface Material...
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Extended current range up to 200 A Solder-free spring contact technology Target Applications Industrial Drives
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Solder-free spring contact technology Target Applications Industrial Drives
Features Low VCEsat with the new 7th gen Mitsubishi chip generation Max Junction Temperature Tvjmax 175 C Solid cover technology for higher reliability Industry standard housing Press-fit pin...
Features NPC topology up to 2400Vdc High efficiency Low inductive package Applications Solar Inverters
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature...
Features Sixpack topology Open emitter configuration Solder-free spring contact technology Integrated thermal sensor Applications Embedded Drives Industrial Drives
Features Symmetrical Booster Integrated DC-capacitor Low DC Inductance (<5nH) Transient Interface for optional regeneration of switching losses Temperature Sensor Applications UPS (3 Phase PFC) Solar inverter (Booster)
Features Three-leg Booster module Full SiC for ultra fast switching frequency Low inductive package Ultra high efficient Target Applications Solar
Features Trench + Field Stop Fast IGBT 4 Technology: Low voltage drop, Low leakage current, Low switching losses, Low leakage current, RBSOA and SCSOA rated SiC Schottky Diode: Zero reverse...
Featuring a combination of SiC diodes with the latest 950 V IGBTs, the new flowNPC 2 for 1500 V multi-string inverters supports 200 kVA and higher output power. Higher efficiency...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes...
ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very...
ISOTOP BOOST CHOPPER NPT IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Non Punch Through (NPT) THUNDERBOLT IGBT, ISOTOP Package (SOT-227),...
ISOTOP BOOST CHOPPER TRENCH + FIELD STOP IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Trench + Field Stop IGBT Technology,...
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level...
Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
POWER MOS 7® MOSFET: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power...
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7®
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low...
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS...
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
POWER MOS V®. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces...
POWER MOS V®: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces...
RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal...
RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
Super Junction MOSFET. Ulra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energy Rated; TO-247 Package.
The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses...
The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in...
The A5G07H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
The A5G08H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
The A5G19H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930...
The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496...
The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applica­tions. The P-channel MOSFET device has a typical RDS(ON) of 80mW, allowing increased load switch power...
The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it...
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications...
The highly intelligent power module flowIPM 1C features CIP topology and three inverter gate drives, including a bootstrap circuit for high-side power supply. Each leg of the inverter provides current-limiting...
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications...
The Power MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many...
The RoadPak is our newest innovative solution for all e-mobility applications. It enables the design of converters with lowest overall stray inductance, thanks to the latest generation of SiC MOSFET...
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz.
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690...
This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.
This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling...
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on)...
Vincotech has now extended the new industry-standard low-profile package for mid-power inverters by a sixpack configuration. Engineered mainly for industrial drives, solar power, and UPS applications, the VINcoPACK E3 raises...
Vincotech's new flowPACK 2 module features high-speed IGBTs and soft-switching diodes for improved efficiency and very fast performance. Engineers seeking to streamline their designs for servo applications and line converters...

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